Memory device and method for making same
First Claim
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1. A method of forming a memory array that includes memory cells extending along a first direction and along a second direction, comprising:
- forming a collector layer;
forming a plurality of collector regions in said collector layer, the collector regions being spaced apart from each other along said first direction and along said second direction;
forming a plurality of base regions over said collector region;
forming a plurality of emitter regions over said base regions; and
forming a plurality of memory elements over said emitter regions, wherein said collector regions, base regions and emitter regions form heterojunction bipolar transistors.
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Abstract
Embodiments relate to a method of forming a memory array, comprising: forming a collector layer; forming a plurality of collector regions in the collector layer; forming a plurality of base regions over the collector region; forming a plurality of emitter regions over the base regions; forming a plurality of memory elements over the emitter regions, wherein the collector regions, base regions and emitter regions form heterojunction bipolar transistors.
20 Citations
20 Claims
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1. A method of forming a memory array that includes memory cells extending along a first direction and along a second direction, comprising:
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forming a collector layer; forming a plurality of collector regions in said collector layer, the collector regions being spaced apart from each other along said first direction and along said second direction; forming a plurality of base regions over said collector region; forming a plurality of emitter regions over said base regions; and forming a plurality of memory elements over said emitter regions, wherein said collector regions, base regions and emitter regions form heterojunction bipolar transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a memory array, the method comprising:
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forming a collector connection layer over a substrate; forming a collector layer over the collector connection layer; forming a plurality of insulating trenches, each insulating trench extending through the collector layer and into the collector connection layer thereby forming a plurality of collector regions in the collector layer; forming a plurality of base regions over the collector region; forming a plurality of emitter regions over the base regions; and forming a plurality of memory elements over the emitter regions, wherein the collector regions, base regions and emitter regions form heterojunction bipolar transistors. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of forming a memory array, the method comprising:
forming a plurality of memory cells arranged along a first direction and a second direction, each of the cells comprising a programmable resistance memory element electrically coupled to a heterojunction bipolar transistor, the heterojunction bipolar transistor of each of the memory cells including a collector region, the collector regions being spaced apart from each other along said first direction and along said second direction. - View Dependent Claims (17, 18, 19, 20)
Specification