Power module packaging with double sided planar interconnection and heat exchangers

• US 9,041,183 B2
• Filed: 07/12/2012
• Issued: 05/26/2015
• Est. Priority Date: 07/19/2011
• Status: Active Grant

• Current Assignee: University of Tennessee Research Foundation (University of Tennessee), UT-Battelle LLC
• Original Assignee: University of Tennessee Research Foundation (University of Tennessee), UT-Battelle LLC
• Inventors: Liang, Zhenxian, Marlino, Laura D., Ning, Puqi, Wang, Fei
• Primary Examiner(s): Arroyo, Teresa M
• Application Number:
  US13/547,937
• Publication Number:
  US 20130020694A1
• Time in Patent Office: 1,048 Days
• Field of Search: 257/686, 257/691, 257/706, 257/712, 257/713, 257/714, 257/E27.019, 257/E27.037, 257/E23.106
• US Class Current: 257/691
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/83825 Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8383 Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Claims

1. A power module package comprising:

a first insulated gate bipolar transistor (IGBT) semiconductor die and a first diode semiconductor die spaced apart from said first IGBT semiconductor die, wherein said first IGBT semiconductor die and said first diode semiconductor die form a first planar power switch unit;

a second IGBT semiconductor die and a second diode semiconductor die spaced apart from said second IGBT semiconductor die, wherein said second IGBT semiconductor die and said second diode semiconductor die form a second planar power switch unit, wherein said first planar power switch unit and said second planar power switch unit are arranged in a plane of a planar power stage and comprise a one phase leg configuration and said first planar power switch unit is oriented in a face-up configuration relative to said plane of said planar power stage and said second planar power switch unit is oriented in a face-down configuration relative to said plane of said planar power stage;

a pair of direct bonded copper (DBC) substrates each having a patterned inner surface wherein a first of said pair of DBC substrates is directly bonded to a top side and a second of said pair of DBC substrates is directly bonded to a bottom side of said planar power stage comprising said one phase leg configuration of said first planar power switch unit and said second planar power switch unit to form a sandwich structure, and wherein said patterned inner surface of each of said pair of DBC substrates is attached and aligned with semiconductor die pads of said first planar power switch unit and said second planar power switch unit;

a substrate attachment layer on an outer surface of each of said pair of DBC substrates, said outer surfaces being opposite said patterned inner surface of each of said pair of DBC substrates; and

each of two heat exchangers being directly bonded to said outer surface of each of said pair of DBC substrates by each of said substrate attachment layers.

2. The power module package of claim 1, wherein said direct bonds are formed by soldering, sintering, solid diffusion bonding or liquid diffusion bonding.

3. The power module package of claim 1, wherein said heat exchangers are made of aluminum or copper material.

4. The power module package of claim 1, wherein said heat exchangers have passages for carrying a coolant.

5. The power module package of claim 1, wherein semiconductor die pads are located on the top side of said planar power stage comprising said one phase leg configuration and on the bottom side of said planar power stage comprising said one phase leg configuration.

6. The power module package of claim 5, wherein power leads and signal leads for external connections are soldered or sintered to said top side and said bottom side located semiconductor die pads of said planar power stage comprising said one phase leg configuration.

7. The power module package of claim 1, wherein a first power lead and a first emitter signal lead are attached to a top of said face up first power switch unit and a second power lead is attached to a top of said face-down second power switch unit and a third power lead and a second emitter lead are attached to a bottom of said face up first power switch unit and to a bottom of said face down second power switch unit.

8. A power module package comprising:

a first insulated gate bipolar transistor (IGBT) semiconductor die and a first diode semiconductor die spaced apart from said first IGBT semiconductor die, wherein said first IGBT semiconductor die and said first diode semiconductor die form a first planar power switch unit;

a second IGBT semiconductor die and a second diode semiconductor die spaced apart from said second IGBT semiconductor die, wherein said second IGBT semiconductor die and said second diode semiconductor die form a second planar power switch unit, wherein said first planar power switch unit and said second planar power switch unit are arranged in a plane of a planar power stage and comprise a one phase leg configuration and said first planar power switch unit is oriented in a face-up configuration relative to said plane of said planar power stage and said second planar power switch unit is oriented in a face-down configuration relative to said plane of said planar power stage;

a pair of insulated metal frame substrates each having a patterned metallic inner surface wherein a first of said pair of insulated metal frame substrates is directly bonded to a top side and a second of said pair of insulated metal frame substrates is directly bonded to a bottom side of said planar power stage comprising said one phase leg configuration of said first planar power switch unit and said second planar power switch unit to form a sandwich structure, and wherein said patterned inner surface of each of said pair of insulated metal frame substrates is attached and aligned with semiconductor die pads of said first planar power switch unit and said second planar power switch unit;

a substrate attachment layer made of insulation bond, on an outer surface of each of said pair of insulated metal frame substrates, said outer surfaces being opposite said patterned inner surface of each of said pair of insulated metal frame substrates; and

each of two heat exchangers being directly bonded to said outer surface of each of said pair of insulated metal frame substrates by said substrate attachment layers.

9. The power module package of claim 8, wherein said direct bonds which bond each of said pair of insulated metal frame substrates to said planar power stage comprising said one phase leg configuration are formed by soldering, sintering, solid diffusion bonding or liquid diffusion bonding.

10. The power module package of claim 8, wherein a first power lead and a first emitter signal lead are attached to a top of said face up first power switch unit and a second power lead is attached to a top of said face-down second power switch unit and a third power lead and a second emitter lead is attached to a bottom of said face up first power switch unit and to a bottom of said face down second power switch unit.