Image sensor with reduced blooming
First Claim
1. An image sensor for an electronic device, comprising:
- a first light sensitive element for collecting charge and having a first saturation value;
a well surrounding at least a portion of the first light sensitive element and having a first doping concentration;
a bridge region defined in the well and in communication with the first light sensitive element and having a second doping concentration; and
a blooming node in communication with the bridge region and a voltage source;
wherein the second doping concentration is less than the first doping concentration; and
when the first light sensitive element collects sufficient charge to reach the first saturation value, additional charge received by the first light sensitive element travels to the blooming node via the bridge region.
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Abstract
An image sensor for an electronic device. The image sensor includes a first light sensitive element for collecting charge and having a first saturation value and a well surrounding at least a portion of the first light sensitive element and having a first doping concentration. The image sensor further includes a bridge region defined in the well and in communication with the first light sensitive element and having a second doping concentration and a blooming node in communication with the bridge region and a voltage source. The second doping concentration is less than the first doping concentration and when light sensitive element collects sufficient charge to reach the first saturation value, additional charge received by the light sensitive element travels to the blooming node via the bridge region.
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Citations
21 Claims
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1. An image sensor for an electronic device, comprising:
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a first light sensitive element for collecting charge and having a first saturation value; a well surrounding at least a portion of the first light sensitive element and having a first doping concentration; a bridge region defined in the well and in communication with the first light sensitive element and having a second doping concentration; and a blooming node in communication with the bridge region and a voltage source; wherein the second doping concentration is less than the first doping concentration; and when the first light sensitive element collects sufficient charge to reach the first saturation value, additional charge received by the first light sensitive element travels to the blooming node via the bridge region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A camera, comprising:
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a lens; and an image sensor in optical communication with the lens, comprising; a first pixel including a first photodiode; a second pixel including a second photodiode; a blooming junction in communication with the first pixel and the second pixel through a bridge region extending between the blooming junction and the first and second photodiodes, wherein the bridge region defines a blooming path between the first photodiode and the second photodiode to the blooming junction, and wherein the bridge region is doped with a first dopant type and the blooming junction is doped with a second dopant type; and a blooming voltage source in communication with the blooming junction, wherein the blooming voltage source determines a potential of the blooming junction; wherein the lens transmits light to the image sensor, creating charge within the first photodiode and the second photodiode; and the blooming junction selectively receives charge from the first photodiode and the second photodiode to substantially prevent the first photodiode and the second photodiode from exceeding a saturation value. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A computing device comprising:
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a processor; and an image sensor in communication with the processor, the image sensor comprising; a photodiode having a full well value; a blooming node in communication with the photodiode; a lightly doped region positioned between the blooming node and the photodiode; and a voltage source in communication with the blooming node, wherein the voltage source determines a potential of the blooming node;
wherein when the photodiode collects charge exceeding the full well value, excess charge is transmitted to the blooming node through the lightly doped region. - View Dependent Claims (20, 21)
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Specification