Range sensor and range image sensor

• US 9,041,917 B2
• Filed: 11/11/2013
• Issued: 05/26/2015
• Est. Priority Date: 05/15/2008
• Status: Active Grant

• Current Assignee: Hamamatsu Photonics KK
• Original Assignee: Hamamatsu Photonics KK
• Inventors: Mase, Mitsuhito, Suzuki, Takashi
• Primary Examiner(s): Ratcliffe, Luke
• Assistant Examiner(s): Woldemaryam, Assres H
• Application Number:
  US14/077,029
• Publication Number:
  US 20140071429A1
• Time in Patent Office: 561 Days
• Field of Search: 356 313-315, 356/4.01, 356/4.05, 356/28, 356/28.5, 356/222
• US Class Current: 356/5.01
• CPC Class Codes: G01C 3/08 Use of electric radiation detectors
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 17/931 of land vehicles
• CPC Class Codes: G01S 7/481 Constructional features, e.g. arrangements of optical elements
• CPC Class Codes: G01S 7/4863 Detector arrays, e.g. charge-transfer gates
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 31/02024 Position sensitive and lateral effect photodetectors; Quadrant photodiodes

Abstract

The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities Q_L, Q_R output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.

Claims

1. A range sensor comprising:

a charge generating region at which charges are generated in response to incident light;

a charge collecting region that collects the charges from the charge generating region;

a transfer electrode provided at a periphery of the charge collecting region and completely surrounding the charge collecting region, and a potential adjusting portion that increases a potential gradient from the charge generating region to the charge collecting region.

2. The range sensor according to claim 1,

wherein the potential adjusting portion comprises a semiconductor region including a conductivity type different from that of the charge collecting region, and having an impurity concentration higher than that of peripheral part of the semiconductor region.

3. The range sensor according to claim 1,

wherein the potential adjusting portion comprises an electrode to which a predetermined potential is imparted.

4. The range sensor according to claim 1,

wherein the number of the potential adjusting portion is plural,

the plurality of the potential adjusting portions are arranged at corners of a square, respectively,

the diagonal lines of the square intersect at a right angle, and

the charge collecting region is positioned at the intersection of the diagonal lines.

5. The range sensor according to claim 1,

wherein the number of the charge collecting region is plural,

the potential adjusting portion is positioned between the charge collecting regions, and

the potential adjusting portion is commonly used for the charge collecting regions.

6. The range sensor according to claim 1,

wherein a shape of the transfer electrode is an annular shape.

7. A range image sensor comprising an imaging region comprised of a plurality of two-dimensionally arranged units on a semiconductor substrate, the imaging region obtaining range images based on charges outputted from the units,

wherein one of the units comprises the range sensor according to claim 1.

8. A range image sensor comprising an imaging region comprised of a plurality of two-dimensionally arranged units on a semiconductor substrate, the imaging region obtaining range images based on charges outputted from the units,

wherein one of the units comprises the range sensor according to claim 1, and

wherein the shape of the transfer electrode forms a ring.

9. A range image sensor comprising an imaging region comprised of a plurality of two-dimensionally arranged units on a semiconductor substrate, the imaging region obtaining range images based on charges outputted from the units,

wherein one of the units comprises the range sensor according to claim 1, and

wherein the transfer electrode transfers charges generated out of a region of the transfer electrode into an inside region of the transfer electrode,

the inside region is the charge collecting region, and

the charge collecting region is thoroughly surrounded by the transfer electrode.

10. A range image sensor comprising an imaging region comprised of a plurality of two-dimensionally arranged units on a semiconductor substrate, the imaging region obtaining range images based on charges outputted from the units,

wherein one of the units comprises the range sensor according to claim 1, and

wherein the transfer electrode transfers charges generated out of a region of the transfer electrode into the charge collecting regions from all directions.