Method of manufacturing a semiconductor device
First Claim
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1. A device comprising:
- a substrate;
a display portion over the substrate, the display portion comprising a transistor and a pixel electrode electrically connected to the transistor, wherein the transistor comprises a gate electrode adjacent to a semiconductor layer including a channel formation region;
a secondary coil over the substrate, the secondary coil configured to receive an AC voltage; and
a rectifier circuit over the substrate, the rectifier circuit configured to rectify the AC voltage to produce a power voltage for the display portion,wherein the gate electrode and the secondary coil are formed by forming a conductive film on an insulating surface and patterning the conductive film.
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Abstract
The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming.
An electromotive force generated by electromagnetic induction is rectified and shaped by using primary coils formed on a check substrate and secondary coils formed on an array substrate, whereby a power source voltage and a driving signal are supplied to circuits or circuit elements on a TFT substrate so as to be driven.
55 Citations
15 Claims
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1. A device comprising:
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a substrate; a display portion over the substrate, the display portion comprising a transistor and a pixel electrode electrically connected to the transistor, wherein the transistor comprises a gate electrode adjacent to a semiconductor layer including a channel formation region; a secondary coil over the substrate, the secondary coil configured to receive an AC voltage; and a rectifier circuit over the substrate, the rectifier circuit configured to rectify the AC voltage to produce a power voltage for the display portion, wherein the gate electrode and the secondary coil are formed by forming a conductive film on an insulating surface and patterning the conductive film. - View Dependent Claims (2, 3, 4, 5)
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6. A device comprising:
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a substrate; a display portion over the substrate, the display portion comprising a transistor and a pixel electrode electrically connected to the transistor, wherein the transistor comprises a gate electrode adjacent to a semiconductor layer including a channel formation region; a secondary coil over the substrate, the secondary coil configured to receive an AC voltage; and a waveform shaping circuit over the substrate, the waveform shaping circuit configured to produce at least one of a clock signal, a start pulse and a video signal from the AC voltage, wherein the gate electrode and the secondary coil are formed by forming a conductive film on an insulating surface and patterning the conductive film. - View Dependent Claims (7, 8, 9, 10)
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11. A device comprising:
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a substrate; a display portion over the substrate, the display portion comprising a first transistor and a pixel electrode electrically connected to the first transistor; a driver circuit for driving the display portion, the driver circuit comprising a second transistor, wherein each of the first transistor and the second transistor comprises a gate electrode adjacent to a semiconductor layer including a channel formation region; a secondary coil over the substrate, the secondary coil configured to receive an AC voltage; and a waveform shaping circuit over the substrate, the waveform shaping circuit configured to produce at least one of a clock signal, a start pulse and a video signal from the AC voltage, wherein the gate electrode and the secondary coil are formed by forming a conductive film on an insulating surface an patterning the conductive film. - View Dependent Claims (12, 13, 14, 15)
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Specification