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Method of manufacturing a semiconductor device

  • US 9,047,796 B2
  • Filed: 05/17/2014
  • Issued: 06/02/2015
  • Est. Priority Date: 03/19/2001
  • Status: Expired due to Fees
First Claim
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1. A device comprising:

  • a substrate;

    a display portion over the substrate, the display portion comprising a transistor and a pixel electrode electrically connected to the transistor, wherein the transistor comprises a gate electrode adjacent to a semiconductor layer including a channel formation region;

    a secondary coil over the substrate, the secondary coil configured to receive an AC voltage; and

    a rectifier circuit over the substrate, the rectifier circuit configured to rectify the AC voltage to produce a power voltage for the display portion,wherein the gate electrode and the secondary coil are formed by forming a conductive film on an insulating surface and patterning the conductive film.

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