MAMR head adapted for high speed switching

• US 9,047,888 B2
• Filed: 12/20/2012
• Issued: 06/02/2015
• Est. Priority Date: 12/20/2012
• Status: Active Grant

• Current Assignee: JP Morgan Chase Bank, N.A. (JP Morgan Chase & Co)
• Original Assignee: HGST Netherlands B.V. (Western Digital Corporation)
• Inventors: Katada, Hiroyuki, Shiimoto, Masato
• Primary Examiner(s): Dravininkas, Adam B
• Application Number:
  US13/723,070
• Publication Number:
  US 20140177092A1
• Time in Patent Office: 894 Days
• Field of Search: 3601253-12532, 360/125.71, 360/125.74, 360/125.75
• US Class Current: 1/1
• CPC Class Codes: G11B 2005/0024 Microwave assisted recording
• CPC Class Codes: G11B 5/314 where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers G11B5/3196 takes precedence

Abstract

A microwave-assisted magnetic recording (MAMR) head according to one embodiment includes a main magnetic pole adapted to generate a writing magnetic field when current is applied to a write coil; a trailing shield positioned, at an air bearing surface (ABS), in a trailing direction from the main magnetic pole; and a field generation layer (FGL) positioned, at the ABS, between the main magnetic pole and the trailing shield, wherein either a portion of the main magnetic pole closer to the FGL or a portion of the trailing shield closer to the FGL is adapted to act as a spin polarization layer.

Claims

1. A microwave-assisted magnetic recording (MAMR) head, comprising:

a main magnetic pole adapted to generate a writing magnetic field when current is applied to a write coil;

a trailing shield positioned, at an air bearing surface (ABS), in a trailing direction from the main magnetic pole;

a field generation layer (FGL) positioned, at the ABS, between the main magnetic pole and the trailing shield; and

an interlayer positioned, at the ABS, between the main magnetic pole and the FGL, wherein the interlayer comprises a non-magnetic material, and

a cap layer positioned, at the ABS, between the FGL and the trailing shield, wherein the cap layer comprises a non-magnetic material,

wherein either a portion of the main magnetic pole closer to the FGL or a portion of the trailing shield closer to the FGL is adapted to act as a spin polarization layer,

wherein the portion of the main magnetic pole is configured to act as the spin polarization layer, and

wherein the portion of the main magnetic pole configured to act as the spin polarization layer is in direct contact with the interlayer and comprises a highly-polarized material.

2. The MAMR head as recited in claim 1, wherein the highly-polarized material of the portion of the main magnetic pole configured to act as the spin polarization layer comprises at least one alloy selected from a group consisting of:

CoMbGe, CoMnSi, and CoCrAl.

3. A magnetic data storage system, comprising:

at least one MAMR head as recited in claim 1;

a magnetic medium;

a drive mechanism for passing the magnetic medium over the at least one magnetic head; and

a controller electrically coupled to the at least one magnetic head for controlling operation of the at least one magnetic head.

4. A method for forming a microwave-assisted magnetic recording (MAMR) head, the method comprising:

forming a main magnetic pole above a substrate, the main magnetic pole being adapted to generate a writing magnetic field when current is applied to a write coil;

forming a field generation layer (FGL) above the main magnetic pole, the FGL being adapted to generate a high-frequency magnetic field when current is applied thereto;

forming a trailing shield above the FGL; and

forming an interlayer between the main magnetic pole and the FGL at an air bearing surface (ABS), wherein the interlayer comprises a non-magnetic material, and

forming a cap layer between the FGL and the trailing shield at the ABS, wherein the cap layer comprises a non-magnetic material,

wherein either a portion of the main magnetic pole closer to the FGL or a portion of the trailing shield closer to the FGL is defined to act as a spin polarization layer,

wherein the portion of the main magnetic pole is configured to act as the spin polarization layer, and

wherein the portion of the main magnetic pole configured to act as the spin polarization layer is in direct contact with the interlayer and comprises a highly-polarized material.

5. The method as recited in claim 4, wherein the highly-polarized material of the portion of the main magnetic pole configured to act as the spin polarization layer comprises at least one Heusler alloy selected from a group consisting of:

CoMbGe, CoMnSi, and CoCrAl.