Semiconductor device and manufacturing method thereof
First Claim
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1. A display device comprising:
- a first substrate;
a transistor over the first substrate, the transistor comprising;
a gate electrode;
a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion;
a first insulating film interposed between the gate electrode and the semiconductor film;
a source electrode over and electrically connected to the semiconductor film; and
a drain electrode over and electrically connected to the semiconductor film;
a pixel electrode over and electrically connected to one of the source electrode and the drain electrode;
a second insulating film over the semiconductor film;
a second substrate over the second insulating film;
a sealing material between the first substrate and the second substrate; and
a terminal portion over the first substrate and outside a portion surrounded by the sealing material, the terminal portion comprising;
a first conductive film; and
a second conductive film over and in contact with a top surface of the first conductive film,wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed portion,wherein the gate electrode overlaps with the recessed portion, andwherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion,wherein a side edge of the semiconductor film extends beyond a side edge of one of the source electrode and the drain electrode,wherein the first conductive film and the gate electrode comprise a same material, andwherein the second conductive film and the pixel electrode comprise a same material.
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Abstract
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
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Citations
21 Claims
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1. A display device comprising:
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a first substrate; a transistor over the first substrate, the transistor comprising; a gate electrode; a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion; a first insulating film interposed between the gate electrode and the semiconductor film; a source electrode over and electrically connected to the semiconductor film; and a drain electrode over and electrically connected to the semiconductor film; a pixel electrode over and electrically connected to one of the source electrode and the drain electrode; a second insulating film over the semiconductor film; a second substrate over the second insulating film; a sealing material between the first substrate and the second substrate; and a terminal portion over the first substrate and outside a portion surrounded by the sealing material, the terminal portion comprising; a first conductive film; and a second conductive film over and in contact with a top surface of the first conductive film, wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed portion, wherein the gate electrode overlaps with the recessed portion, and wherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion, wherein a side edge of the semiconductor film extends beyond a side edge of one of the source electrode and the drain electrode, wherein the first conductive film and the gate electrode comprise a same material, and wherein the second conductive film and the pixel electrode comprise a same material. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a first substrate; a transistor over the first substrate, the transistor comprising; a gate electrode; a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion; a first insulating film interposed between the gate electrode and the semiconductor film; a source electrode over and electrically connected to the semiconductor film; and a drain electrode over and electrically connected to the semiconductor film; a pixel electrode over and electrically connected to one of the source electrode and the drain electrode; a second insulating film over the semiconductor film; a second substrate over the second insulating film; a sealing material between the first substrate and the second substrate; and a terminal portion over the first substrate and outside a portion surrounded by the sealing material, the terminal portion comprising; a first conductive film; and a second conductive film over and in contact with a top surface of the first conductive film, wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed portion, wherein the gate electrode overlaps with the recessed portion, and wherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion, wherein a side edge of the semiconductor film extends beyond a side edge of one of the source electrode and the drain electrode, wherein the first conductive film and the gate electrode are formed from a same conductive film, and wherein the second conductive film and the pixel electrode are formed from a same conductive film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising:
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a first substrate; a transistor over the first substrate, the transistor comprising; a gate electrode; a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a third portion interposed between the first portion and the second portion; a first n-type semiconductor layer over the semiconductor film; a second n-type semiconductor layer over the semiconductor film; a first insulating film interposed between the gate electrode and the semiconductor film; a source electrode over and electrically connected to the semiconductor film through the first n-type semiconductor layer; and a drain electrode over and electrically connected to the semiconductor film through the second n-type semiconductor layer; a pixel electrode over and electrically connected to one of the source electrode and the drain electrode; a second insulating film over the semiconductor film; a second substrate over the second insulating film; a sealing material between the first substrate and the second substrate; and a terminal portion over the first substrate and outside a portion surrounded by the sealing material, the terminal portion comprising; a first conductive film; and a second conductive film over and in contact with a top surface of the first conductive film, wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first n-type semiconductor layer, a top surface of the second n-type semiconductor layer and a top surface of the third portion, wherein the gate electrode overlaps with the third portion, and wherein a gap between the source electrode and the drain electrode is larger than a gap between the first n-type semiconductor layer and the second n-type semiconductor layer, wherein a side edge of the semiconductor film extends beyond a side edge of one of the source electrode and the drain electrode, wherein a side edge of the first n-type semiconductor layer extends beyond a side edge of the source electrode, or a side edge of the second n-type semiconductor layer extends beyond a side edge of the drain electrode, wherein the first conductive film and the gate electrode comprise a same material, and wherein the second conductive film and the pixel electrode comprise a same material. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification