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Semiconductor device and manufacturing method thereof

  • US 9,048,146 B2
  • Filed: 08/28/2014
  • Issued: 06/02/2015
  • Est. Priority Date: 05/09/2000
  • Status: Expired due to Fees
First Claim
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1. A display device comprising:

  • a first substrate;

    a transistor over the first substrate, the transistor comprising;

    a gate electrode;

    a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion;

    a first insulating film interposed between the gate electrode and the semiconductor film;

    a source electrode over and electrically connected to the semiconductor film; and

    a drain electrode over and electrically connected to the semiconductor film;

    a pixel electrode over and electrically connected to one of the source electrode and the drain electrode;

    a second insulating film over the semiconductor film;

    a second substrate over the second insulating film;

    a sealing material between the first substrate and the second substrate; and

    a terminal portion over the first substrate and outside a portion surrounded by the sealing material, the terminal portion comprising;

    a first conductive film; and

    a second conductive film over and in contact with a top surface of the first conductive film,wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed portion,wherein the gate electrode overlaps with the recessed portion, andwherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion,wherein a side edge of the semiconductor film extends beyond a side edge of one of the source electrode and the drain electrode,wherein the first conductive film and the gate electrode comprise a same material, andwherein the second conductive film and the pixel electrode comprise a same material.

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