Dual-gate trench IGBT with buried floating P-type shield
First Claim
1. An insulated gate bipolar transistor (IGBT) device supported in a semiconductor substrate wherein:
- the semiconductor substrate comprising an epitaxial layer of a first conductivity type supported on a bottom layer of a second conductivity type electrically contacting a collector electrode disposed on a bottom surface of the semiconductor substrate;
the IGBT device further comprises a body region of the second conductivity type disposed near a top surface of the semiconductor substrate encompassing a source region of the first conductivity type below a top surface of the semiconductor substrate;
the epitaxial layer further includes an upper heavily doped layer having a higher dopant concentration of the first conductivity type below the body region;
the IGBT device further comprises a trench gate and a planar gate disposed on the top surface of the semiconductor substrate wherein the trench gate extends downwardly below and substantially from a midpoint of the planar gate; and
at least a second trench filled with a gate material disposed at substantially a periphery portion of the IGBT device at a distance away from the trench gate and the planar gate and is electrically connected to a source electrode.
1 Assignment
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Accused Products
Abstract
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.
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Citations
12 Claims
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1. An insulated gate bipolar transistor (IGBT) device supported in a semiconductor substrate wherein:
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the semiconductor substrate comprising an epitaxial layer of a first conductivity type supported on a bottom layer of a second conductivity type electrically contacting a collector electrode disposed on a bottom surface of the semiconductor substrate; the IGBT device further comprises a body region of the second conductivity type disposed near a top surface of the semiconductor substrate encompassing a source region of the first conductivity type below a top surface of the semiconductor substrate; the epitaxial layer further includes an upper heavily doped layer having a higher dopant concentration of the first conductivity type below the body region; the IGBT device further comprises a trench gate and a planar gate disposed on the top surface of the semiconductor substrate wherein the trench gate extends downwardly below and substantially from a midpoint of the planar gate; and at least a second trench filled with a gate material disposed at substantially a periphery portion of the IGBT device at a distance away from the trench gate and the planar gate and is electrically connected to a source electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification