Regenerative building block and diode bridge rectifier and methods
First Claim
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1. A rectifier device comprising:
- first and second transistors, each transistor comprisinga gate region;
a source region adjacent said gate region;
a drain region;
a drift region adjacent said drain region;
a semiconductor region in the drift region and aligned with an opening of the gate region;
a first electrode coupled to the gate region; and
a second electrode coupled to the semiconductor region of the drift region, the first electrode and second electrode being configured to control a voltage of the gate region independent of a voltage of the semiconductor region;
said second electrode of said first transistor being coupled to the first electrode of the second transistor, and said second electrode of said second transistor being coupled to the first electrode of the first transistor.
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Abstract
A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.
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Citations
14 Claims
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1. A rectifier device comprising:
first and second transistors, each transistor comprising a gate region; a source region adjacent said gate region; a drain region; a drift region adjacent said drain region; a semiconductor region in the drift region and aligned with an opening of the gate region; a first electrode coupled to the gate region; and a second electrode coupled to the semiconductor region of the drift region, the first electrode and second electrode being configured to control a voltage of the gate region independent of a voltage of the semiconductor region; said second electrode of said first transistor being coupled to the first electrode of the second transistor, and said second electrode of said second transistor being coupled to the first electrode of the first transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An apparatus comprising:
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a first field effect device; and a second field effect device, the first field effect device comprising a first gate region, a first source region adjacent said first gate region, a first drain region, a first drift region adjacent said first drain region, a first semiconductor region in the first drift region and aligned with an opening of the first gate region, a first electrode coupled to the first gate region, and a second electrode coupled to the first semiconductor region of the first drift region, the second electrode being a different electrode than the first electrode; the second field effect device comprising a second gate region, a second source region, a second drain region, a second drift region configured to carry current between the second source region and the second drain region when the second field effect device is in a conducting state, a second semiconductor region in the second drift region and aligned with an opening of the second gate region, a third electrode coupled to the second gate region, and a fourth electrode coupled to the second semiconductor region of the second drift region, the fourth electrode being a different electrode than the second electrode; the first electrode being coupled to the fourth electrode, and the second electrode being coupled to the third electrode; the first source region, the second source region, the first semiconductor region, and the second semiconductor region being of a first conductivity type. - View Dependent Claims (13, 14)
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Specification