Regenerative building block and diode bridge rectifier and methods

• US 9,048,308 B2
• Filed: 03/14/2013
• Issued: 06/02/2015
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: STMicroelectronics International N.V. (STMicroelectronics NV)
• Original Assignee: STMicroelectronics International N.V. (STMicroelectronics NV)
• Inventors: Ankoudinov, Alexei, Rodov, Vladimir
• Primary Examiner(s): Payen, Marvin
• Assistant Examiner(s): JOY, JEREMY J
• Application Number:
  US13/803,881
• Publication Number:
  US 20130328113A1
• Time in Patent Office: 810 Days
• Field of Search: 257/133, 257/135, 257/328, 257/E29.066, 257/E29.257, 438/135, 438/138
• US Class Current: 1/1
• CPC Class Codes: H01L 27/0817 Thyristors only
• CPC Class Codes: H01L 29/0646 PN junctions
• CPC Class Codes: H01L 29/66075 of devices having semiconductor bodies comprising group 14 or group 13/15 materials comprising semiconducting carbon H01L29/66015; comprising crystalline silicon carbide H01L29/66053
• CPC Class Codes: H01L 29/66477 with an insulated gate, i.e. MISFET
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

Claims

1. A rectifier device comprising:

first and second transistors, each transistor comprising

a gate region;

a source region adjacent said gate region;

a drain region;

a drift region adjacent said drain region;

a semiconductor region in the drift region and aligned with an opening of the gate region;

a first electrode coupled to the gate region; and

a second electrode coupled to the semiconductor region of the drift region, the first electrode and second electrode being configured to control a voltage of the gate region independent of a voltage of the semiconductor region;

said second electrode of said first transistor being coupled to the first electrode of the second transistor, and said second electrode of said second transistor being coupled to the first electrode of the first transistor.

2. The rectifier device of claim 1, wherein the drift region is configured to carry current between the source region and the drain region when the first and second transistors are in a conducting state.

3. The rectifier device of claim 1, wherein each transistor comprises a body region;

wherein the source region is in the body region; and

wherein the drift region is a portion of the body region.

4. The rectifier device of claim 1, wherein each transistor comprises a bulk region;

and wherein the drift region is a portion of the bulk region.

5. The rectifier device of claim 1, wherein the second electrode is not directly connected to the first electrode.

6. The rectifier device of claim 1, wherein each transistor comprises a channel region configured to conduct current between the source region and the drain region when the first and second transistors are in a conducting state.

7. The rectifier device of claim 1, wherein the source region is configured to produce a depletion region in the drift region when the first and second transistors are in a non-conducting state;

and wherein the semiconductor region is in the drift region such that the semiconductor region is within the depletion region when the first and second transistors are in the non-conducting state.

8. The rectifier device of claim 1, wherein the source region comprises a semiconductor material of a first conductivity type;

and wherein the semiconductor region comprises a semiconductor material of the first conductivity type.

9. The rectifier device of claim 8, wherein the semiconductor region has a dopant concentration greater than that of the source region.

10. The rectifier device of claim 1, wherein the source region comprises a first source region and a second source region, the first source region being positioned on a first side of the drift region and the second source region being positioned on a second side of the drift region;

and wherein the semiconductor region is positioned between the first source region and the second source region.

11. The rectifier device of claim 10, wherein the gate region comprises a first gate region and a second gate region, the first gate region being positioned over a portion of the first source region and over a first portion of the semiconductor region and the second gate region being positioned over a portion of the second source region and over a second portion of the semiconductor region.

12. An apparatus comprising:

a first field effect device; and

a second field effect device, the first field effect device comprising a first gate region,

a first source region adjacent said first gate region,

a first drain region,

a first drift region adjacent said first drain region,

a first semiconductor region in the first drift region and aligned with an opening of the first gate region,

a first electrode coupled to the first gate region, and

a second electrode coupled to the first semiconductor region of the first drift region, the second electrode being a different electrode than the first electrode;

the second field effect device comprising

a second gate region,

a second source region,

a second drain region,

a second drift region configured to carry current between the second source region and the second drain region when the second field effect device is in a conducting state,

a second semiconductor region in the second drift region and aligned with an opening of the second gate region,

a third electrode coupled to the second gate region, and

a fourth electrode coupled to the second semiconductor region of the second drift region, the fourth electrode being a different electrode than the second electrode;

the first electrode being coupled to the fourth electrode, and the second electrode being coupled to the third electrode;

the first source region, the second source region, the first semiconductor region, and the second semiconductor region being of a first conductivity type.

13. The apparatus of claim 12, further comprising a fifth electrode coupled to the first source region and the second source region.

14. The apparatus of claim 13, further comprising first, second, and third external terminals, the first external terminal being coupled to the first drain region, a second external terminal being coupled to the second drain region, the third terminal being coupled to a metal layer.