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Regenerative building block and diode bridge rectifier and methods

  • US 9,048,308 B2
  • Filed: 03/14/2013
  • Issued: 06/02/2015
  • Est. Priority Date: 09/26/2007
  • Status: Active Grant
First Claim
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1. A rectifier device comprising:

  • first and second transistors, each transistor comprisinga gate region;

    a source region adjacent said gate region;

    a drain region;

    a drift region adjacent said drain region;

    a semiconductor region in the drift region and aligned with an opening of the gate region;

    a first electrode coupled to the gate region; and

    a second electrode coupled to the semiconductor region of the drift region, the first electrode and second electrode being configured to control a voltage of the gate region independent of a voltage of the semiconductor region;

    said second electrode of said first transistor being coupled to the first electrode of the second transistor, and said second electrode of said second transistor being coupled to the first electrode of the first transistor.

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