Display device including oxide semiconductor layer
First Claim
1. A display device comprising:
- a plurality of scan lines and a plurality of signal lines which intersect with each other over a substrate;
a pixel portion over the substrate, the pixel portion including a plurality of transparent pixel electrodes arranged in matrix;
a signal input terminal in a periphery of the substrate; and
a non-linear element between the pixel portion and the signal input terminal,wherein the pixel portion includes a thin film transistor,wherein the thin film transistor includes;
a first oxide semiconductor layer including a channel formation region;
a first gate electrode connected to one of the plurality of scan lines;
a first wiring layer connecting the one of the plurality of signal lines and the first oxide semiconductor layer; and
a second wiring layer connecting one of the plurality of transparent pixel electrodes and the first oxide semiconductor layer, the one of the plurality of transparent pixel electrodes being provided over the first oxide semiconductor layer, and wherein the non-linear element includes;
a second gate electrode connected to one of the plurality of scan lines or one of the plurality of signal lines;
a gate insulating layer covering the second gate electrode;
a second oxide semiconductor layer over the gate insulating layer, the second oxide semiconductor layer overlapping with the second gate electrode;
a channel protective layer over the second oxide semiconductor layer, the channel protective layer overlapping with a channel formation region of the second oxide semiconductor layer, wherein the channel protective layer is an insulating layer comprising an oxide;
a third wiring layer over the channel protective layer and the second oxide semiconductor layer, wherein an end portion of the third wiring layer overlaps with the second gate electrode, and wherein the third wiring layer includes a stack of a first conductive layer and a third oxide semiconductor layer;
a fourth wiring layer over the channel protective layer and the second oxide semiconductor layer, wherein an end portion of the fourth wiring layer overlaps with the second gate electrode, and wherein the fourth wiring layer includes a stack of a second conductive layer and a fourth oxide semiconductor layer; and
a transparent conductive film over the second gate electrode, the transparent conductive film connecting the second gate electrode and one of the third wiring layer and the fourth wiring layer.
1 Assignment
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Accused Products
Abstract
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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Citations
24 Claims
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1. A display device comprising:
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a plurality of scan lines and a plurality of signal lines which intersect with each other over a substrate; a pixel portion over the substrate, the pixel portion including a plurality of transparent pixel electrodes arranged in matrix; a signal input terminal in a periphery of the substrate; and a non-linear element between the pixel portion and the signal input terminal, wherein the pixel portion includes a thin film transistor, wherein the thin film transistor includes; a first oxide semiconductor layer including a channel formation region; a first gate electrode connected to one of the plurality of scan lines; a first wiring layer connecting the one of the plurality of signal lines and the first oxide semiconductor layer; and a second wiring layer connecting one of the plurality of transparent pixel electrodes and the first oxide semiconductor layer, the one of the plurality of transparent pixel electrodes being provided over the first oxide semiconductor layer, and wherein the non-linear element includes; a second gate electrode connected to one of the plurality of scan lines or one of the plurality of signal lines; a gate insulating layer covering the second gate electrode; a second oxide semiconductor layer over the gate insulating layer, the second oxide semiconductor layer overlapping with the second gate electrode; a channel protective layer over the second oxide semiconductor layer, the channel protective layer overlapping with a channel formation region of the second oxide semiconductor layer, wherein the channel protective layer is an insulating layer comprising an oxide; a third wiring layer over the channel protective layer and the second oxide semiconductor layer, wherein an end portion of the third wiring layer overlaps with the second gate electrode, and wherein the third wiring layer includes a stack of a first conductive layer and a third oxide semiconductor layer; a fourth wiring layer over the channel protective layer and the second oxide semiconductor layer, wherein an end portion of the fourth wiring layer overlaps with the second gate electrode, and wherein the fourth wiring layer includes a stack of a second conductive layer and a fourth oxide semiconductor layer; and a transparent conductive film over the second gate electrode, the transparent conductive film connecting the second gate electrode and one of the third wiring layer and the fourth wiring layer. - View Dependent Claims (4, 7, 10, 13, 16, 19, 22)
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2. A display device comprising:
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a plurality of scan lines and a plurality of signal lines which intersect with each other over a substrate; a pixel portion over the substrate, the pixel portion including a plurality of transparent pixel electrodes arranged in matrix; a first protective circuit connecting one of the plurality of scan lines and a first common wiring; and a second protective circuit connecting one of the plurality of signal lines and a second common wiring, wherein the pixel portion includes a thin film transistor, wherein the thin film transistor includes; a first oxide semiconductor layer including a channel formation region; a first gate electrode connected to one of the plurality of scan lines; a first wiring layer connecting the one of the plurality of signal lines and the first oxide semiconductor layer; and a second wiring layer connecting one of the plurality of transparent pixel electrodes and the first oxide semiconductor layer, the one of the plurality of transparent pixel electrodes being provided over the first oxide semiconductor layer, wherein the first protective circuit and the second protective circuit each include a non-linear element, and wherein the non-linear element includes; a second gate electrode connected to one of the plurality of scan lines or one of the plurality of signal lines; a gate insulating layer covering the second gate electrode; a second oxide semiconductor layer over the gate insulating layer, the second oxide semiconductor layer overlapping with the second gate electrode; a channel protective layer over the second oxide semiconductor layer, the channel protective layer overlapping with a channel formation region of the second oxide semiconductor layer, wherein the channel protective layer is an insulating layer comprising an oxide; a third wiring layer over the channel protective layer and the second oxide semiconductor layer, wherein an end portion of the third wiring layer overlaps with the second gate electrode, and wherein the third wiring layer includes a stack of a first conductive layer and a third oxide semiconductor layer; a fourth wiring layer over the channel protective layer and the second oxide semiconductor layer, wherein an end portion of the fourth wiring layer overlaps with the second gate electrode, and wherein the fourth wiring layer includes a stack of a second conductive layer and a fourth oxide semiconductor layer; and a transparent conductive film over the second gate electrode, the transparent conductive film connecting the second gate electrode and one of the third wiring layer and the fourth wiring layer. - View Dependent Claims (5, 8, 11, 14, 17, 20, 23)
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3. A display device comprising:
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a first wiring layer over a substrate; a pixel over the substrate; and a protective circuit over the substrate, wherein the pixel includes; a thin film transistor, wherein a gate electrode of the thin film transistor is connected to the first wiring layer; and a transparent pixel electrode over a channel formation region of the thin film transistor and connected to a source electrode or a drain electrode of the thin film transistor, wherein the protective circuit includes; a gate insulating film over the first wiring layer; a first oxide semiconductor layer over the gate insulating film; a channel protective layer over the first oxide semiconductor layer, wherein the channel protective layer is an insulating layer comprising an oxide; a second oxide semiconductor layer over the first oxide semiconductor layer and the channel protective layer; a third oxide semiconductor layer over the first oxide semiconductor layer and the channel protective layer; a first conductive layer over the second oxide semiconductor layer; a second conductive layer over the third oxide semiconductor layer; and a transparent conductive film over the first wiring layer, the transparent conductive film connecting the first wiring layer and the first conductive layer. - View Dependent Claims (6, 9, 12, 15, 18, 21, 24)
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Specification