Device with inverted large scale light extraction structures

• US 9,048,378 B2
• Filed: 06/15/2012
• Issued: 06/02/2015
• Est. Priority Date: 06/15/2011
• Status: Active Grant

• Current Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Inventors: Shatalov, Maxim S., Dobrinsky, Alexander, Shur, Michael, Gaska, Remigijus
• Primary Examiner(s): Miyoshi, Jesse Y
• Application Number:
  US13/524,350
• Publication Number:
  US 20130032835A1
• Time in Patent Office: 1,082 Days
• Field of Search: 257/79, 257/98, 257/E33.074, 257/95, 257/E33.067
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Claims

1. A device comprising:

a first at least partially transparent layer having a first profiled surface, wherein the first profiled surface comprises a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale;

a second at least partially transparent layer having a second profiled surface adjacent to the first profiled surface, wherein the second profiled surface comprises a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale, and wherein the first characteristic scale is approximately an order of magnitude larger than the second characteristic scale, wherein the first at least partially transparent layer and the second at least partially transparent layer are sapphire; and

bonding material attaching the first profiled surface and the second profiled surface, wherein the bonding material has a refractive index selected based on a refractive index of at least one of;

a material of the first at least partially transparent layer or a material of the second at least partially transparent layer.

2. The device of claim 1, wherein at least one of the first variation or the second variation is a non-periodic random variation.

3. The device of claim 1, wherein the set of large roughness components comprises a series of shapes being at least one of:

a truncated pyramid or a truncated cone.

4. The device of claim 3, wherein the series of shapes are inversely truncated to facilitate focusing of the radiation.

5. The device of claim 3, wherein each of the series of shapes has a cone opening angle less than normal.

6. The device of claim 3, wherein a side of each of the series of shapes forms an angle with the normal to a base of the shape less than forty-five degrees.

7. The device of claim 3, further comprising filler material located in at least some of the spaces between the set of large roughness components.

8. The device of claim 1, wherein the bonding material has a refractive index between or equal to one of the refractive indexes of the material of the first at least partially transparent layer and the material of the second at least partially transparent layer.

9. The device of claim 1, wherein the set of small roughness components forms a photonic crystal.

10. The device of claim 1, wherein the device is configured to operate as one of:

a light emitting diode, a laser diode, or a super-luminescent light emitting diode.

11. A method comprising:

creating a device design defining a plurality of attributes of a device including an interface between first and second at least partially transparent layers, wherein the interface in the device design includes;

a first profiled surface of the first at least partially transparent layer, wherein the first profiled surface comprises a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale;

a second profiled surface of the second at least partially transparent layer adjacent to the first profiled surface, wherein the second profiled surface comprises a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale, and wherein the first characteristic scale is approximately an order of magnitude larger than the second characteristic scale, wherein the first at least partially transparent layer and the second at least partially transparent layer are sapphire; and

bonding material attaching the first profiled surface and the second profiled surface, wherein the designing includes selecting the bonding material based on a refractive index of at least one of;

a material of the first at least partially transparent layer or a material of the second at least partially transparent layer; and

storing the device design on a non-transitory computer readable medium.

12. The method of claim 11, further comprising fabricating the device including the first and the second at least partially transparent layers according to the device design, wherein the fabricating includes fabricating the interface.

13. The method of claim 12, wherein the fabricating the interface includes forming at least one of:

the set of large roughness components or the set of small roughness components using at least one of;

selective deposition or selective etching.

14. The method of claim 12, wherein the set of large roughness components comprises a series of shapes being at least one of:

a truncated pyramid or a truncated cone, and wherein the set of small roughness components comprises a plurality of peaks and valleys of a material forming the second at least partially transparent layer.

15. The method of claim 12, wherein the fabricating the interface includes

bonding the first profiled surface to the second profiled surface using the bonding material.

16. The method of claim 12, wherein the fabricating the interface includes depositing a filler material on at least a portion of at least one of:

the first or the second profiled surfaces, wherein the filler material at least partially fills at least some of the spaces between the set of large roughness components.

17. An emitting device comprising:

an active region configured to generate radiation;

a first at least partially transparent layer having a first profiled surface, wherein the first profiled surface comprises a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale; and

a second at least partially transparent layer having a second profiled surface adjacent to the first profiled surface, wherein the second profiled surface comprises a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale, wherein the first characteristic scale is approximately an order of magnitude larger than the second characteristic scale, and wherein radiation generated by the active region passes through the second at least partially transparent layer before entering the first at least partially transparent layer, wherein the first at least partially transparent layer and the second at least partially transparent layer are sapphire.

18. The device of claim 17, wherein the set of large roughness components comprises a series of shapes being at least one of:

a truncated pyramid or a truncated cone.

19. The device of claim 17, wherein the set of small roughness components comprises a plurality of peaks and valleys of a material forming the second at least partially transparent layer.

20. The device of claim 17, further comprising an at least partially reflective layer located on an opposing side of the active region from the first at least partially transparent layer and the second at least partially transparent layer.

21. The device of claim 17, wherein the device is formed using a group III-nitride based heterostructure.

22. The device of claim 17, further comprising bonding material attaching the first profiled surface and the second profiled surface, wherein the bonding material comprises a cured polymer film.