Light-emitting devices
First Claim
1. A light-emitting device, comprising:
- a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer;
a protruding structure;
a beveled trench in the semiconductor layer sequence and accommodating the protruding structure;
a dielectric layer on the second semiconductor layer and an inner sidewall of the beveled trench;
a first metal layer on the dielectric layer and contacting with the first semiconductor layer, wherein the first metal layer is insulated from the second semiconductor layer by the dielectric layer;
a void formed between the first metal layer and the protruding structure;
a carrier substrate; and
a first connection layer connecting the carrier substrate and the semiconductor layer sequence,wherein the second semiconductor layer is closer to he carrier substrate than the first semiconductor layer is to the carrier substrate.
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Accused Products
Abstract
A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.
14 Citations
19 Claims
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1. A light-emitting device, comprising:
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a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a protruding structure; a beveled trench in the semiconductor layer sequence and accommodating the protruding structure; a dielectric layer on the second semiconductor layer and an inner sidewall of the beveled trench; a first metal layer on the dielectric layer and contacting with the first semiconductor layer, wherein the first metal layer is insulated from the second semiconductor layer by the dielectric layer; a void formed between the first metal layer and the protruding structure; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence, wherein the second semiconductor layer is closer to he carrier substrate than the first semiconductor layer is to the carrier substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification