Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
First Claim
1. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:
- forming alternating elevationally outer regions of two different composition materials;
removing one of the two different composition materials inwardly to an elevationally outermost location of the one material that is deeper than an elevationally outermost location of the other of the two different composition materials at the end of said removing to form alternating regions of elevational depressions and elevational protrusions; and
forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks.
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Abstract
A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.
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Citations
16 Claims
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1. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:
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forming alternating elevationally outer regions of two different composition materials; removing one of the two different composition materials inwardly to an elevationally outermost location of the one material that is deeper than an elevationally outermost location of the other of the two different composition materials at the end of said removing to form alternating regions of elevational depressions and elevational protrusions; and forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:
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forming an elevationally outer substrate material elevationally over underlying material; etching through the elevationally outer substrate material into the underlying material to form trenches in the underlying material and the outer substrate material; over-filling the trenches with material of different composition from that of the outer substrate material; removing the material of different composition to expose the outer substrate material; removing one of the material of different composition or the outer substrate material inwardly to form alternating regions of elevational depressions and elevational protrusions; and forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks. - View Dependent Claims (15, 16)
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Specification