Laser device with configurable intensity distribution

• US 9,048,633 B2
• Filed: 08/16/2010
• Issued: 06/02/2015
• Est. Priority Date: 08/20/2009
• Status: Active Grant

• Current Assignee: TRUMPF Photonic Components GmbH (TRUMPF SE + Co. KG)
• Original Assignee: Koninklijke Philips N.V.
• Inventors: Gronenborn, Stephan, Moench, Holger
• Primary Examiner(s): Dinh, Jack
• Application Number:
  US13/391,303
• Publication Number:
  US 20120281293A1
• Time in Patent Office: 1,751 Days
• Field of Search: 359/618, 359/619, 359621-624, 359/626, 359/641
• US Class Current: 1/1
• CPC Class Codes: B23K 26/0608 in the same heat affected zone [HAZ] B23K26/0613, B23K26/0619 take precedence
• CPC Class Codes: B23K 26/073 Shaping the laser spot
• CPC Class Codes: B41J 2/451 Special optical means therefor, e.g. lenses, mirrors, focusing means
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/0267 Integrated focusing lens H01S5/18388 takes precedence
• CPC Class Codes: H01S 5/0624 controlling the near- or far field
• CPC Class Codes: H01S 5/4012 Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

The present invention relates to a laser device comprising an array of several large area VCSELs (101) and one or several optics (201, 202) designed and arranged to image the active layers of the VCSELs (101) of said array to a working plane (501) such that the laser radiation emitted by the active layers of all VCSELs (101) or of subgroups of VCSELs (101) of the array superimposes in the working plane (501). The proposed laser device allows the generation of a desired intensity distribution in the working plane without the need of an optics specially designed for this intensity distribution or beam profile.

Claims

1. A laser device comprising:

an array of several large area vertical cavity surface emission lasers, each of said lasers comprising an active layer emitting laser radiation;

at least one optics configured and arranged to image the active layers of the lasers of said array to a working plane such that the laser radiation emitted by the active layers of all lasers or of subgroups of lasers of the array superimposes in the working plane; and

,

wherein said array comprises at least a first and a second vertical cavity surface emission laser being individually switchable by a control unit,

said first laser being configured to emit a laser beam with a first shape of intensity distribution in the near field,

said second laser being configured to emit a laser beam with a second shape of intensity distribution in the near field different from the first shape,

such that shaping of a laser beam profile in the working plane is enabled.

2. The laser device according to claim 1, wherein at least some of said lasers are configured to emit laser beams with different shapes of intensity distribution in the near field, said lasers comprising different geometrical shapes and/or different diameters of an emission area or emission aperture.

3. The laser device according to claim 1, wherein said optics comprises an array of micro lenses and one or several field lenses.

4. The laser device according to claim 1, wherein said optics comprises an array of micro lenses, said micro lenses being arranged off axis with respect to beam axes of the lasers.

5. The laser device according to claim 1, wherein said array comprises n vertical cavity surface emission lasers and said optics comprises n micro lenses and m field lenses, wherein n=a*m, a=2, 3, . . . , each micro lens being arranged in front of a laser and each field lens being arranged to image intensity distributions of a subgroup of lasers to the working plane such that said intensity distributions of all lasers of the subgroup superimpose at a position in the working plane, the positions of the different subgroups being different from one another.

6. The laser device according to claim 1, wherein said optics is configured to generate a non-sharp image of the active layers in the working plane.

7. The laser device according to claim 1, wherein said optics is configured and arranged to image the active layers of adjacent subgroups of lasers side by side, preferably partly overlapping, so as to generate a continuous laser line or laser area in the working plane, said laser line extending in a first direction.

8. The laser device according to claim 7, wherein said lasers of each subgroup are configured to emit laser beams with elongated shapes of intensity distribution in the near field, in particular with rectangular or parallelogram-like shapes, said elongated shapes having a larger extension in the first direction than in a second direction perpendicular to the first direction.

9. The laser device according to claim 8, wherein said lasers of each subgroup are configured to emit laser beams with rectangular shapes of different dimensions in the near field, said dimensions being selected to generate a superimposed integrated intensity profile having a constant central part and stepwise decreasing edges along the laser line in the working plane.

10. The laser device according to claim 8, wherein said optics is configured to image the active layers of all lasers of each subgroup to exactly superpose in a second direction in the working plane, the second direction being perpendicular to the first direction.

11. The laser device according to claim 8, wherein said subgroups of lasers or groups of said subgroups of lasers are separated from one another in the first direction by a gap, and said optics is configured to image the active layers of the lasers of each subgroup to an image size in the first direction in the working plane which is an integer multiple of the gap periodicity.

12. The laser device according to claim 1, further comprising a control unit for controlling the power of each of the subgroups of lasers and a measurement unit connected to the control unit, the measurement unit being configured and arranged to measure power levels of the individual subgroups to provide a feedback for the control unit.

13. The laser device according to claim 1, wherein said optics is configured to provide different magnification factors in perpendicular directions.

14. The laser device of claim 1, wherein each of said large area vertical cavity surface emission lasers has an emission area ≧

80 μ

m².

15. The laser device of claim 1, wherein each of said large area vertical cavity surface emission lasers has an emission area ≧

300 μ

m².

16. A laser device comprising

an array of several large area vertical cavity surface emission lasers, each of said lasers comprising an active layer emitting laser radiation, wherein said emitted laser radiation is dominated by Fourier modes;

at least one optics configured and arranged to image the active layers of the lasers of said array to a working plane such that the laser radiation emitted by the active layers of all lasers or of subgroups of lasers of the array superimposes in the working plane; and

,

wherein at least some of said lasers are configured to emit laser beams with different shapes of intensity distribution in the near field.

17. The laser device according to claim 16, wherein said array comprises at least a first and a second vertical cavity surface emission laser being individually switchable by a control unit, said first laser being configured to emit a laser beam with a first shape of intensity distribution in the near field, said second laser being configured to emit a laser beam with a second shape of intensity distribution in the near field different from the first shape.

18. The laser device according to claim 17, wherein said array comprises at least one or several further vertical cavity surface emission lasers being individually switchable by the control unit and configured to emit a laser beam with one or several further shapes of intensity distribution in the near field different from the first and second shape.