Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

• US 9,048,812 B2
• Filed: 08/12/2011
• Issued: 06/02/2015
• Est. Priority Date: 02/28/2011
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Burak, Dariusz, Nikkel, Phil, Kaitila, Jyrki, Larson, John D. III, Shirakawa, Alexandre
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US13/208,909
• Publication Number:
  US 20120218060A1
• Time in Patent Office: 1,390 Days
• Field of Search: 333187-192, 310/320, 310/322, 310/323.01, 310/334, 310/335
• US Class Current: 1/1
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/02007 of bulk acoustic wave devices
• CPC Class Codes: H03H 9/02118 of lateral leakage between adjacent resonators
• CPC Class Codes: H03H 9/132 characterized by a particular shape
• CPC Class Codes: H03H 9/173 Air-gaps
• CPC Class Codes: H03H 9/175 Acoustic mirrors
• CPC Class Codes: H03H 9/583 comprising a plurality of piezoelectric layers acoustically coupled
• CPC Class Codes: H03H 9/584 Coupled Resonator Filters [CFR]
• CPC Class Codes: H03H 9/585 Stacked Crystal Filters [SCF]
• CPC Class Codes: H03H 9/587 Air-gaps
• CPC Class Codes: H03H 9/589 Acoustic mirrors

Abstract

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Claims

1. A bulk acoustic wave (BAW) resonator structure, comprising:

a first electrode disposed over a substrate;

a piezoelectric layer disposed over the first electrode;

a second electrode disposed over the piezoelectric layer; and

a bridge buried within the piezoelectric layer, wherein the bridge defines at least a portion of a perimeter along an active region of the BAW resonator structure.

2. The BAW resonator structure of claim 1, wherein the bridge comprises an unfilled bridge, containing air.

3. The BAW resonator structure of claim 1, wherein the bridge comprises a filled bridge, containing a dielectric material.

4. The BAW resonator structure of claim 3, wherein the dielectric material comprises one of non-etchable borosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), or silicon carbide (SiC).

5. The BAW resonator structure of claim 1, wherein the bridge comprises a filled bridge, containing a metal.

6. The BAW resonator structure of claim 5, wherein the metal comprises one of tungsten (W), molybdenum (Mo), copper (Cu) or iridium (Ir).

7. The BAW resonator structure of claim 1, wherein the bridge has a trapezoidal cross-sectional shape.

8. A bulk acoustic wave (BAW) resonator structure, comprising:

a first electrode disposed over a substrate;

a first piezoelectric layer disposed over the first electrode;

a second electrode disposed over the first piezoelectric layer;

a second piezoelectric layer disposed over the second electrode;

a third electrode disposed over the second piezoelectric layer; and

a first bridge buried within one of the first piezoelectric layer and the second piezoelectric layer.

9. The BAW resonator structure of claim 8, wherein the first bridge comprises an unfilled bridge, containing air.

10. The BAW resonator structure of claim 8, further comprising:

a second bridge buried within the other one of the first piezoelectric layer and the second piezoelectric layer.

11. The BAW resonator structure of claim 10, wherein at least one of the first bridge and the second bridge comprises an unfilled bridge, containing air.

12. The BAW resonator structure of claim 10, wherein at least one of the first bridge and the second bridge comprises a filled bridge, containing a fill material having an acoustic impedance.

13. The BAW resonator structure of claim 12, wherein the fill material comprises one of dielectric material or a metal.

14. A bulk acoustic wave (BAW) resonator structure, comprising:

a first BAW resonator comprising a first electrode, a first piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer;

an acoustic coupling layer disposed over the second electrode of the first BAW resonator, wherein the acoustic coupling layer is configured to determine pass-band characteristics of the BAW resonator structure;

a second BAW resonator comprising a third electrode disposed over the acoustic coupling layer, a second piezoelectric layer disposed over the third electrode, and a fourth electrode disposed over the second piezoelectric layer; and

a first bridge buried within one of the first piezoelectric layer of the first BAW resonator and the second piezoelectric layer of the second BAW resonator.

15. The BAW resonator structure of claim 14, wherein the first bridge comprises an unfilled bridge, containing air.

16. The BAW resonator structure of claim 14, further comprising:

a second bridge buried within the other one of the first piezoelectric layer of the first BAW resonator and the second piezoelectric layer of the second BAW resonator.

17. The BAW resonator structure of claim 16, wherein at least one of the first bridge and the second bridge comprises an unfilled bridge, containing air.

18. The BAW resonator structure of claim 17, wherein at least one of the first bridge and the second bridge comprises a filled bridge, containing a fill material having an acoustic impedance.

19. The BAW resonator structure of claim 18, wherein the fill material comprises one of dielectric material or a metal.

20. The BAW resonator structure of claim 17, wherein the acoustic coupling layer comprises at least one of carbon doped oxide (CDO) and NEBSG.