Transmissive image modulator including stacked diode structure having multi absorption modes
First Claim
1. A transmissive light modulator comprising:
- a first reflection layer;
a first active layer, arranged on the first reflection layer and comprising a plurality of quantum well layers and a plurality of barrier layers;
a second reflection layer arranged on the first active layer;
a second active layer, arranged on the second reflection layer and comprising a plurality of quantum well layers and a plurality of barrier layers; and
a third reflection layer arranged on the second active layer,wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, andthe second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant, such that the first active layer and the second active layer are electrically connected to each other in parallel.
1 Assignment
0 Petitions
Accused Products
Abstract
A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.
18 Citations
25 Claims
-
1. A transmissive light modulator comprising:
-
a first reflection layer; a first active layer, arranged on the first reflection layer and comprising a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and comprising a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant, such that the first active layer and the second active layer are electrically connected to each other in parallel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
-
Specification