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Ultra-high efficacy semiconductor light emitting devices

  • US 9,052,416 B2
  • Filed: 04/15/2011
  • Issued: 06/09/2015
  • Est. Priority Date: 11/18/2008
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting apparatus comprising:

  • a wavelength conversion element comprising wavelength conversion material;

    a light emitting diode that is oriented to emit light to impinge upon the wavelength conversion element, wherein the wavelength conversion element is remote from the light emitting diode; and

    an optical surface between the light emitting diode and the wavelength conversion element that passes substantially all of the light emitted from the light emitting diode,wherein the semiconductor light emitting apparatus produces light that has passed through the wavelength conversion element such that the apparatus is capable of producing light between 150 and 208 lumens per watt at a color temperature of between 2000 K and 8000 K.

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