Semiconductor device and method of fabricating the same

• US 9,052,551 B2
• Filed: 01/27/2012
• Issued: 06/09/2015
• Est. Priority Date: 07/06/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Goto, Yuugo, Kobayashi, Yuko, Yamazaki, Shunpei
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): Anya, Igwe U
• Application Number:
  US13/359,515
• Publication Number:
  US 20120120336A1
• Time in Patent Office: 1,229 Days
• Field of Search: 257/296, 349/155
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133302 Rigid substrates, e.g. inorganic substrates
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/924 : To facilitate selective etching
• CPC Class Codes: Y10S 438/98 : Utilizing process equivalents or options

Abstract

There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.

Claims

1. A liquid crystal display device comprising:

a first substrate;

a second substrate;

an interlayer insulating film between the first substrate and the second substrate;

a storage capacitor between the interlayer insulating film and the first substrate;

a photolithographic spacer and a liquid crystal material which are between the interlayer insulating film and the second substrate; and

a pixel electrode between the photolithographic spacer and the interlayer insulating film,

wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the interlayer insulating film,

wherein the photolithographic spacer comprises a first resin material,

wherein the interlayer insulating film comprises a second resin material,

wherein the photolithographic spacer overlaps with the storage capacitor with the interlayer insulating film interposed between the photolithographic spacer and the storage capacitor,

wherein the photolithographic spacer overlaps with the insulating film, the island- shaped semiconductor layer, and the capacitor wiring, and

wherein the photolithographic spacer and the pixel electrode overlap with each other.

2. The liquid crystal display device according claim 1, wherein the pixel electrode comprises an ITO film.

3. The liquid crystal display device according claim 1, wherein the photolithographic spacer is formed on the second substrate side.

4. The liquid crystal display device according claim 1, further comprising:

a counter electrode between the photolithographic spacer and the second substrate.

5. A liquid crystal display device comprising:

a first substrate;

a second substrate;

an interlayer insulating film between the first substrate and the second substrate;

a storage capacitor and a wiring which are between the interlayer insulating film and the first substrate;

a photolithographic spacer, a liquid crystal material, and a sealing material which are between the interlayer insulating film and the second substrate; and

a pixel electrode between the photolithographic spacer and the interlayer insulating film,

wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the interlayer insulating film,

wherein the photolithographic spacer comprises a first resin material,

wherein the interlayer insulating film comprises a second resin material,

wherein the sealing material comprises a filler,

wherein the photolithographic spacer overlaps with the storage capacitor with the interlayer insulating film interposed between the photolithographic spacer and the storage capacitor,

wherein the sealing material overlaps with the wiring with the interlayer insulating film interposed between the sealing material and the wiring,

wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring, and

wherein the photolithographic spacer and the pixel electrode overlap with each other.

6. The liquid crystal display device according claim 5, wherein the pixel electrode comprises an ITO film.

7. The liquid crystal display device according claim 5, wherein the photolithographic spacer is formed on the second substrate side.

8. The liquid crystal display device according claim 5, further comprising:

a counter electrode between the photolithographic spacer and the second substrate.

9. A liquid crystal display device comprising:

a first substrate;

a second substrate;

an interlayer insulating film between the first substrate and the second substrate;

a storage capacitor and a pixel thin film transistor which are between the interlayer insulating film and the first substrate;

a photolithographic spacer and a liquid crystal material which are between the interlayer insulating film and the second substrate; and

a pixel electrode between the photolithographic spacer and the interlayer insulating film,

wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the interlayer insulating film,

wherein the storage capacitor comprises a first region of the island-shaped semiconductor layer,

wherein the pixel thin film transistor comprises a second region of the island-shaped semiconductor layer,

wherein the photolithographic spacer comprises a first resin material,

wherein the interlayer insulating film comprises a second resin material,

wherein the photolithographic spacer overlaps with the storage capacitor with the interlayer insulating film interposed between the photolithographic spacer and the storage capacitor,

wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring, and

wherein the photolithographic spacer and the pixel electrode overlap with each other.

10. The liquid crystal display device according claim 9, wherein the pixel electrode comprises an ITO film.

11. The liquid crystal display device according claim 9, wherein the pixel thin film transistor is a multi-gate structure.

12. The liquid crystal display device according claim 9, wherein the photolithographic spacer is formed on the second substrate side.

13. The liquid crystal display device according claim 9, further comprising:

a counter electrode between the photolithographic spacer and the second substrate.

14. A liquid crystal display device comprising:

a first substrate;

a second substrate;

an interlayer insulating film between the first substrate and the second substrate;

a storage capacitor, a wiring and a pixel thin film transistor which are between the interlayer insulating film and the first substrate;

a photolithographic spacer, a liquid crystal material and a sealing material which are between the interlayer insulating film and the second substrate; and

a pixel electrode between the photolithographic spacer and the interlayer insulating film,

wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the interlayer insulating film,

wherein the storage capacitor comprises a first region of the island-shaped semiconductor layer,

wherein the pixel thin film transistor comprises a second region of the island-shaped semiconductor layer,

wherein the photolithographic spacer comprises a first resin material,

wherein the interlayer insulating film comprises a second resin material,

wherein the sealing material comprises a filler,

wherein the photolithographic spacer overlaps with the storage capacitor with the interlayer insulating film interposed between the photolithographic spacer and the storage capacitor,

wherein the sealing material overlaps with the wiring with the interlayer insulating film interposed between the sealing material and the wiring,

wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring, and

wherein the photolithographic spacer and the pixel electrode overlap with each other.

15. The liquid crystal display device according claim 14, wherein the pixel electrode comprises an ITO film.

16. The liquid crystal display device according claim 14, wherein the pixel thin film transistor is a multi-gate structure.

17. The liquid crystal display device according claim 14, wherein the photolithographic spacer is formed on the second substrate side.

18. The liquid crystal display device according claim 14, further comprising:

a counter electrode between the photolithographic spacer and the second substrate.

19. A liquid crystal display device comprising:

an FPC;

a first substrate;

a second substrate;

a first insulating film between the first substrate and the second substrate;

a second insulating film between the first insulating film and the second substrate;

a storage capacitor and a pixel thin film transistor which are between the first insulating film and the first substrate;

a wiring and a first conductive layer which are between the first insulating film and the second insulating film;

a photolithographic spacer, a liquid crystal material and a sealing material which are between the second insulating film and the second substrate; and

a pixel electrode between the photolithographic spacer and the second insulating film,

wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the first insulating film,

wherein the storage capacitor comprises a first region of the island-shaped semiconductor layer,

wherein the pixel thin film transistor comprises a second region of the island-shaped semiconductor layer,

wherein the first conductive layer is electrically connected to the island-shaped semiconductor layer through a first contact hole provided in the first insulating film,

wherein the pixel electrode is electrically connected to the first conductive layer through a second contact hole provided in the second insulating film,

wherein the wiring is electrically connected to the FPC through a second conductive layer,

wherein the photolithographic spacer comprises a first resin material,

wherein the second insulating film comprises a second resin material,

wherein the sealing material comprises a filler,

wherein the photolithographic spacer overlaps with the storage capacitor with the second insulating film interposed between the photolithographic spacer and the storage capacitor,

wherein the sealing material overlaps with the wiring with the second insulating film interposed between the sealing material and the wiring,

wherein the second conductive layer overlaps with the wiring,

wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring, and

wherein the photolithographic spacer and the pixel electrode overlap with each other.

20. The liquid crystal display device according claim 19, wherein each of the pixel electrode and the second conductive layer comprises an ITO film.

21. The liquid crystal display device according claim 19, wherein the pixel thin film transistor is a multi-gate structure.

22. The liquid crystal display device according claim 19, wherein the first conductive layer comprises a stacked-layer film in which an aluminum film is interposed between a first titanium film and a second titanium film.

23. The liquid crystal display device according claim 19, wherein the photolithographic spacer is formed on the second substrate side.

24. The liquid crystal display device according claim 19, further comprising:

a counter electrode between the photolithographic spacer and the second substrate.