Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
First Claim
1. A nitride semiconductor wafer comprising:
- a silicon substrate;
a buffer section provided on the silicon substrate; and
a functional layer provided on the buffer section and comprising a nitride semiconductor,wherein;
the buffer section comprises first to n-th buffer layers comprising a nitride semiconductor, n being an integer of 4 or more;
an i-th buffer layer, i being an integer of 1 or more and less than n, of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer;
an (i+1)-th buffer layer in direct contact with the i-th buffer layer has a lattice length W(i+1) in the first direction; and
in the first to n-th buffer layers, the i-th buffer layer and the (i+1)-th buffer layer satisfy a relation of 0.003≦
(W(i+1)-Wi)/Wi≦
0.008.
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Accused Products
Abstract
According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.
25 Citations
37 Claims
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1. A nitride semiconductor wafer comprising:
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a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and comprising a nitride semiconductor, wherein; the buffer section comprises first to n-th buffer layers comprising a nitride semiconductor, n being an integer of 4 or more; an i-th buffer layer, i being an integer of 1 or more and less than n, of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer; an (i+1)-th buffer layer in direct contact with the i-th buffer layer has a lattice length W(i+1) in the first direction; and in the first to n-th buffer layers, the i-th buffer layer and the (i+1)-th buffer layer satisfy a relation of 0.003≦
(W(i+1)-Wi)/Wi≦
0.008. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A nitride semiconductor device comprising:
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a buffer section formed on a silicon substrate and a functional layer provided on the buffer section and comprising a nitride semiconductor, wherein; the buffer section comprises first to n-th buffer layers comprising a nitride semiconductor, n being an integer of 4 or more; an i-th buffer layer i being an integer of 1 or more and less than n, of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer; an (i+1)-th buffer layer in direct contact with the i-th buffer layer has a lattice length W(i+1) in the first direction; and in the first to n-th buffer layers, the i-th buffer layer and the (i+1)-th buffer layer satisfy a relation of 0.003 ≦
(W(i+1)-Wi)/Wi ≦
0.008. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification