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Radiation-emitting semiconductor chip

  • US 9,054,016 B2
  • Filed: 10/29/2009
  • Issued: 06/09/2015
  • Est. Priority Date: 11/28/2008
  • Status: Active Grant
First Claim
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1. A radiation-emitting semiconductor chip comprising a carrier and a semiconductor body having a semiconductor layer sequence, whereinan emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence;

  • the semiconductor layer sequence comprises an active region that generates radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;

    the first semiconductor layer is arranged on a side of the active region which faces away from the carrier;

    the emission region has a recess extending through the active region;

    the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier;

    the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer;

    the second semiconductor layer electrically conductively connects in the emission region with a second connection layer;

    the second connection layer runs in regions between the emission region and the first connection layer; and

    the second connection layer comprises a cutout through which the first connection layer extends through the second connection layer and electrically conductively connects to the second semiconductor layer in the protective diode region,wherein the semiconductor chip has a contact provided for external contact connection of the second connection layer, and the contact covers the protective diode region in a plan view of the semiconductor chip and the contact does not transmit light.

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