Radiation-emitting semiconductor chip

• US 9,054,016 B2
• Filed: 10/29/2009
• Issued: 06/09/2015
• Est. Priority Date: 11/28/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Moosburger, Jrgen, von Malm, Norwin, Rode, Patrick, Hppel, Lutz, Engl, Karl
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): HALL, VICTORIA KATHLEEN
• Application Number:
  US13/123,421
• Publication Number:
  US 20110260205A1
• Time in Patent Office: 2,049 Days
• Field of Search: 257/79, 257/E33.001, 257/E33.005, 257/E33.006, 257/E33.011, 257/E33.044, 257/E33.055, 257/E23.01, 257/E23.141, 257/E23.142, 257E23151-E23169, 257/E23.175, 257/E23.002, 257/99, 257E33062-E33066, 257/776, 257/773, 438/22, 438/26, 438/28
• US Class Current: 1/1
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

Claims

1. A radiation-emitting semiconductor chip comprising a carrier and a semiconductor body having a semiconductor layer sequence, wherein

an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence;

the semiconductor layer sequence comprises an active region that generates radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;

the first semiconductor layer is arranged on a side of the active region which faces away from the carrier;

the emission region has a recess extending through the active region;

the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier;

the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer;

the second semiconductor layer electrically conductively connects in the emission region with a second connection layer;

the second connection layer runs in regions between the emission region and the first connection layer; and

the second connection layer comprises a cutout through which the first connection layer extends through the second connection layer and electrically conductively connects to the second semiconductor layer in the protective diode region,

wherein the semiconductor chip has a contact provided for external contact connection of the second connection layer, and the contact covers the protective diode region in a plan view of the semiconductor chip and the contact does not transmit light.

2. The semiconductor chip according to claim 1,

wherein the emission region and the protective diode region are connected in antiparallel with one another with regard to their forward direction.

3. The semiconductor chip according to claim 1,

wherein the emission region and the protective diode region are regions of the semiconductor body arranged alongside one another in a lateral direction.

4. The semiconductor chip according to claim 1,

wherein the semiconductor body is cohesively connected to the carrier, and wherein the first connection layer runs in regions between the semiconductor body and the carrier.

5. The semiconductor chip according to claim 1,

wherein the second connection layer in the protective diode region is electrically conductively connected to the first semiconductor layer.

6. The semiconductor chip according to claim 2,

wherein the emission region and the protective diode region are regions of the semiconductor body arranged alongside one another in a lateral direction.

7. A method for producing a plurality of radiation-emitting semiconductor chips comprising:

a) providing a semiconductor layer sequence having an active region that generates radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;

b) forming a plurality of recesses extending through the second semiconductor layer and through the active region;

c) forming a first connection layer on the semiconductor layer sequence, wherein the first connection layer in the recesses is electrically conductively connected to the first semiconductor layer, and wherein the first connection layer is electrically conductively connected in regions to the second semiconductor layer;

d) forming an assemblage comprising the semiconductor layer sequence and a carrier;

e) forming a plurality of emission regions and a plurality of protective diode regions from the semiconductor layer sequence, wherein the emission regions each have at least one recess and, in the protective diode regions, the first connection layer is electrically conductively connected to the second semiconductor layer; and

f) singulating the assemblage into a plurality of semiconductor chips, wherein each semiconductor chip has at least one emission region and at least one protective diode region such that

the second semiconductor layer electrically conductively connects in the emission region with a second connection layer;

the second connection layer runs in regions between the emission region and the first connection layer; and

the second connection layer comprises a cutout through which the first connection layer extends through the second connection layer and electrically conductively connects to the second semiconductor layer in the protective diode region,

wherein the semiconductor chip has a contact provided for external contact connection of the second connection layer, wherein;

the contact is arranged on that side of the carrier which faces the semiconductor body;

the contact is spaced apart from the emission region in a lateral direction; and

the contact is electrically conductively connected to the second semiconductor layer in the emission region,

wherein the contact covers the protective diode region in a plan view of the semiconductor chip and the contact does not transmit light.

8. The method according to claim 7,

wherein, before step e), a growth substrate for the semiconductor layer sequence is removed at least in selected regions.

9. A radiation-emitting semiconductor chip comprising a carrier and a semiconductor body having a semiconductor layer sequence, wherein:

an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence;

the semiconductor layer sequence comprises an active region that generates radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;

the first semiconductor layer is arranged on a side of the active region which faces away from the carrier;

the emission region has a recess extending through the active region;

the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier;

the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer;

the second semiconductor layer electrically conductively connects in the emission region with a second connection layer;

the second connection layer runs in regions between the emission region and the first connection layer; and

the second connection layer comprises a cutout through which the first connection layer extends through the second connection layer and electrically conductively connects to the second semiconductor layer in the protective diode region,

wherein the semiconductor chip has a contact provided for external contact connection of the second connection layer, wherein;

the contact is arranged on that side of the carrier which faces the semiconductor body;

the contact is spaced apart from the emission region in a lateral direction; and

the contact is electrically conductively connected to the second semiconductor layer in the emission region,

wherein the contact covers the protective diode region in a plan view of the semiconductor chip, and the contact does not transmit light.