Module having a stacked passive element and method of forming the same

• US 9,054,086 B2
• Filed: 10/02/2008
• Issued: 06/09/2015
• Est. Priority Date: 10/02/2008
• Status: Expired due to Fees

• Current Assignee: Altera Corporation (Intel Corporation)
• Original Assignee: Enpirion, Inc. (MediaTek, Inc.)
• Inventors: Lotfi, Ashraf W., Lopata, Douglas Dean, Weld, John David, Wilkowski, Mathew A.
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): CHOUDHRY, MOHAMMAD M
• Application Number:
  US12/244,669
• Publication Number:
  US 20100084750A1
• Time in Patent Office: 2,441 Days
• Field of Search: 257/621, 257/693
• US Class Current: 1/1
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 27/22 Cooling by heat conduction through solid or powdered fillings
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05555 being circular or elliptic
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/495 Lead-frames or other flat leads H01L23/498 takes precedence; lead frame interconnections between components H01L23/52
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H10K 50/87 : Arrangements for heating or cooling

Abstract

A module having a discrete passive element and a semiconductor device, and method of forming the same. In one embodiment, the module includes a patterned leadframe, a discrete passive element mounted on an upper surface of the leadframe, and a thermally conductive, electrically insulating material formed on an upper surface of the discrete passive element. The module also includes a semiconductor device bonded to an upper surface of the thermally conductive, electrically insulating material.

Claims

1. A module, comprising:

a patterned leadframe;

a discrete passive element mounted on an upper surface of said leadframe including a main body, planar metallic ends formed on and about ends of said main body extending laterally on an upper surface and a lower surface thereof, and a planar extended metallic region extending from one end of one of said planar metallic ends formed on said upper surface of said discrete passive element beyond said one of said planar metallic ends on said lower surface of said discrete passive element and positioned to provide a heat flow path from a semiconductor device positioned above said discrete passive element to said leadframe, said planar metallic ends including at least one of a base layer, an intermetallic barrier layer and a solderable surface; and

a thermally conductive, electrically insulating material formed on said planar extended metallic region and a portion of said upper surface of said discrete passive element, wherein said semiconductor device is bonded to an upper surface of said thermally conductive, electrically insulating material and includes a higher heat-producing region located above said planar extended metallic region.

2. The module as recited in claim 1 wherein said semiconductor device includes a lower heat-producing region located above said main body of said discrete passive element.

3. The module as recited in claim 1 wherein said base layer includes silver, said intermetallic barrier layer includes nickel and said solderable surface includes tin.

4. The module as recited in claim 1 wherein said discrete passive element comprises another planar extended metallic region extending from another one of said planar metallic ends on said upper surface of said discrete passive element.

5. The module as recited in claim 1 wherein an active element of said semiconductor device is positioned at least partially over one of said planar metallic ends of said discrete passive element.

6. The module as recited in claim 1 wherein said discrete passive element is mounted on a pad on said upper surface of said leadframe.

7. The module as recited in claim 1 wherein said discrete passive element is mounted via solder paste on a pad on said upper surface of said leadframe.

8. The module as recited in claim 1 wherein said semiconductor device is wire bonded to a lead on said leadframe.

9. The module as recited in claim 1 wherein said semiconductor device is coupled to a lead on said leadframe and said lead provides electrical connectivity to an external circuit.

10. The module as recited in claim 1 further comprising an encapsulant about said leadframe, said discrete passive element and said semiconductor device.

11. A power module, comprising:

a patterned leadframe;

a discrete magnetic device mounted on an upper surface of said leadframe including a main body, planar metallic ends formed on and about ends of said main body extending laterally on an upper surface and a lower surface thereof, and a planar extended metallic region extending from one end of one of said planar metallic ends formed on said upper surface of said discrete magnetic device beyond said one of said planar metallic ends on said lower surface of said discrete magnetic device and positioned to provide a heat flow path from a semiconductor device positioned above said discrete magnetic device to said leadframe, said planar metallic ends including at least one of a base layer, an intermetallic barrier layer and a solderable surface; and

;

a thermally conductive, electrically insulating material formed on said planar extended metallic region and a portion of said upper surface of said discrete magnetic device, wherein said semiconductor device is bonded to an upper surface of said thermally conductive, electrically insulating material and includes a higher heat-producing region located above said planar extended metallic region.

12. The power module as recited in claim 11 wherein said semiconductor device includes lower heat-producing region located above said main body of said discrete passive element.

13. The power module as recited in claim 11 wherein said base layer includes silver, said intermetallic barrier layer includes nickel and said solderable surface includes tin.

14. The power module as recited in claim 11 wherein said discrete magnetic device comprises another planar extended metallic region extending from another one of said planar metallic ends on said upper surface of said discrete magnetic device.

15. The power module as recited in claim 11 wherein an active element of said semiconductor device is positioned at least partially over one of said planar metallic ends of said discrete magnetic device.

16. The power module as recited in claim 11 wherein said discrete magnetic device is mounted on a pad on said upper surface of said leadframe.

17. The power module as recited in claim 11 wherein said discrete magnetic device is mounted via solder paste on a pad on said upper surface of said leadframe.

18. The power module as recited in claim 11 wherein said semiconductor device is wire bonded to a lead on said leadframe.

19. The power module as recited in claim 11 wherein said semiconductor device is coupled to a lead on said leadframe and said lead provides electrical connectivity to an external circuit.

20. The power module as recited in claim 11 further comprising an encapsulant about said leadframe, said discrete magnetic device and said semiconductor device.