Energy conditioning circuit arrangement for integrated circuit

• US 9,054,094 B2
• Filed: 08/19/2011
• Issued: 06/09/2015
• Est. Priority Date: 04/08/1997
• Status: Expired due to Fees

• Current Assignee: X2Y Attenuators, LLC
• Original Assignee: X2Y Attenuators, LLC
• Inventors: Anthony, Anthony A., Anthony, William M.
• Primary Examiner(s): Jackson, Stephen W
• Application Number:
  US13/213,859
• Publication Number:
  US 20120034774A1
• Time in Patent Office: 1,390 Days
• Field of Search: 361/118
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H03H 1/0007 of radio frequency interference filters
• CPC Class Codes: H05K 1/0233 Filters, inductors or a magnetic substance

Abstract

The present invention relates to an interposer substrate for interconnecting between active electronic componentry such as but not limited to a single or multiple integrated circuit chips in either a single or a combination and elements that could comprise of a mounting substrate, substrate module, a printed circuit board, integrated circuit chips or other substrates containing conductive energy pathways that service an energy utilizing load and leading to and from an energy source. The interposer will also possess a multi-layer, universal multi-functional, common conductive shield structure with conductive pathways for energy and EMI conditioning and protection that also comprise a commonly shared and centrally positioned conductive pathway or electrode of the structure that can simultaneously shield and allow smooth energy interaction between grouped and energized conductive pathway electrodes containing a circuit architecture for energy conditioning as it relates to integrated circuit device packaging. The invention can be employed between an active electronic component and a multilayer circuit card. A method for making the interposer is not presented and can be varied to the individual or proprietary construction methodologies that exist or will be developed.

Claims

1. A method for making a conductive pathway arrangement connected to an integrated circuit wafer, said method comprising:

connecting a first conductive pathway, a third conductive pathway and a fifth conductive pathway to one another to form a plurality of conductive containers;

arranging dielectric between a fourth conductive area of a fourth conductive pathway and a fifth conductive area of said fifth conductive pathway;

arranging dielectric between a third conductive area of said third conductive pathway and said fourth conductive area of said fourth conductive pathway;

arranging dielectric between a second conductive area of a second conductive pathway and said third conductive area of said third conductive pathway;

arranging dielectric between a first conductive area of said first conductive pathway and said second conductive area of said second conductive pathway;

stacking said fourth conductive area of said fourth conductive pathway above said fifth conductive area of said fifth conductive pathway;

stacking said third conductive area of said third conductive pathway above said fourth conductive area of said fourth conductive pathway;

stacking said second conductive area of said second conductive pathway above said third conductive area of said third conductive pathway;

stacking said first conductive area of said first conductive pathway above said second conductive area of said second conductive pathway;

positioning said third conductive area as both a centered and shared conductive structure of all conductive containers of said plurality of conductive containers;

arranging said plurality of conductive containers such that said plurality consists essentially of an upper conductive container connected to a lower conductive container;

electrically insulating said second conductive pathway and said fourth conductive pathway from said plurality of conductive containers and one another;

positioning within said upper conductive container a portion of said second conductive area that is smaller in size than said third conductive area;

positioning within said lower conductive container a portion of said fourth conductive area that is substantially the same size as said portion of said second conductive area;

positioning said portion of said second conductive area and said portion of said fourth conductive area to overlap one another;

conductively connecting said second conductive pathway to a first portion of an integrated circuit wafer; and

conductively connecting said fourth conductive pathway to a second portion of said integrated circuit wafer.

2. The method of claim 1, further comprising:

connecting said first conductive area to said third conductive area with a first plurality of vertical conductive elements; and

connecting said third conductive area to said fifth conductive area with a second plurality of vertical conductive elements.

3. The method of claim 2, further comprising:

arranging said portion of said second conductive area within said upper conductive container such that said upper conductive container is operable to electrostatically suppress energy parasitics created within said upper conductive container when said integrated circuit wafer is energized; and

arranging said portion of said fourth conductive area within said lower conductive container such that said lower conductive container is operable to electrostatically suppress energy parasitics created within said lower conductive container when said integrated circuit wafer is energized.