Through silicon via keep out zone formation method and system
First Claim
1. A method of forming an integrated circuit (IC), the method comprising:
- receiving a substrate having a plurality of active devices thereon; and
forming a first through silicon via (TSV) such that none of the plurality of active devices are positioned in a first keep out zone (KOZ), the first KOZ being a region in which a stress impact of the first TSV exceeds a first threshold, the first KOZ having a first radius to a center of the first TSV in a first crystal orientation and a second radius to the center of the first TSV in a second crystal orientation, the first radius being smaller than the second radius.
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Abstract
Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs.
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Citations
20 Claims
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1. A method of forming an integrated circuit (IC), the method comprising:
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receiving a substrate having a plurality of active devices thereon; and forming a first through silicon via (TSV) such that none of the plurality of active devices are positioned in a first keep out zone (KOZ), the first KOZ being a region in which a stress impact of the first TSV exceeds a first threshold, the first KOZ having a first radius to a center of the first TSV in a first crystal orientation and a second radius to the center of the first TSV in a second crystal orientation, the first radius being smaller than the second radius. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming an integrated circuit (IC), the method comprising:
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forming a plurality of through silicon vias (TSVs), the plurality of TSVs having an overall keep out zone (KOZ) defined as a region in which a stress impact of one or more of the plurality of TSVs exceed a first threshold, the stress impact of each TSV varying with a crystal orientation; and forming a plurality of active devices, none of the plurality of active devices being formed within the overall KOZ. - View Dependent Claims (11, 12, 13, 14)
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15. A method of forming an integrated circuit (IC), the method comprising:
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forming a plurality of active devices; forming a plurality of through silicon vias (TSVs), the plurality of TSVs being arranged in a pattern having linear segments, wherein each TSV has a respective keep out zone (KOZ), a union of the respective KOZs defining an overall KOZ for the plurality of TSVs; and forming a plurality of TSV stress plugs at an end region of the overall KOZ of the plurality of TSVs, the stress plugs being omitted from side regions of the overall KOZ, wherein none of the plurality of active devices are located within the overall KOZ. - View Dependent Claims (16, 17, 18, 20)
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19. A method of forming an integrated circuit (IC), the method comprising:
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forming a plurality of active devices; forming a plurality of through silicon vias (TSVs), the plurality of TSVs being arranged in a pattern having a regular shape, wherein each TSV has a respective keep out zone (KOZ), a union of the respective KOZs defining an overall KOZ for the plurality of TSVs; and forming a plurality of TSV stress plugs at a perimeter of the overall KOZ of the plurality of TSVs, wherein none of the plurality of active devices are located within the overall KOZ; wherein the plurality of TSVs form a circle and the plurality of TSV stress plugs are formed at alternating positions within the circle.
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Specification