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Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn

  • US 9,054,196 B2
  • Filed: 05/01/2012
  • Issued: 06/09/2015
  • Est. Priority Date: 05/10/2011
  • Status: Active Grant
First Claim
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1. A sputtering target comprising an oxide sintered body that comprises In, Ga, and Zn in an atomic ratio that falls within a region 1, a region 2, or a region 3,the region 1 being defined by:

  • 0.58≦

    In/(In +Ga+Zn)≦

    0.680.15<

    Ga/(In+Ga+Zn)≦

    0.29,the region 2 being defined by;

    0.45≦

    In/(In+Ga+Zn)<

    0.580.09≦

    Ga/(In+Ga+Zn)<

    0.20, andthe region 3 being defined by;

    0.45≦

    In/(In+Ga+Zn)<

    0.580.20≦

    Ga/(In+Ga+Zn)≦

    0.27; and

    wherein the oxide sintered body has a specific resistivity of less than 15 mΩ

    ·

    cm and a relative density of more than 97%.

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