Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same
First Claim
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1. A semiconductor device, comprising:
- a diode structure configured to emit light upon the application of a voltage thereto;
a plurality of discrete phosphor-containing regions spaced apart laterally on an external surface of the diode structure and configured to receive light emitted by the diode structure and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the diode structure; and
an overlayer comprising a phosphor-loaded material on the diode structure, wherein the plurality of discrete phosphor containing regions are between the overlayer and the diode structure, wherein the plurality of discrete phosphor-containing regions comprise a first plurality of spaced apart phosphor-containing regions comprising a first type of phosphor configured to convert light emitted by the diode structure to a first wavelength and a second plurality of spaced apart phosphor-containing regions comprising a second type of phosphor configured to convert light emitted by the diode structure to a second wavelength that is different from the first wavelength, wherein the second plurality of spaced apart phosphor containing regions are free of the first type of phosphor;
wherein adjacent ones of the first plurality of phosphor-containing regions are spaced apart from one another on the external surface of the diode structure with intervening ones of the second plurality of phosphor containing regions therebetween.
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Abstract
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
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Citations
17 Claims
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1. A semiconductor device, comprising:
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a diode structure configured to emit light upon the application of a voltage thereto; a plurality of discrete phosphor-containing regions spaced apart laterally on an external surface of the diode structure and configured to receive light emitted by the diode structure and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the diode structure; and an overlayer comprising a phosphor-loaded material on the diode structure, wherein the plurality of discrete phosphor containing regions are between the overlayer and the diode structure, wherein the plurality of discrete phosphor-containing regions comprise a first plurality of spaced apart phosphor-containing regions comprising a first type of phosphor configured to convert light emitted by the diode structure to a first wavelength and a second plurality of spaced apart phosphor-containing regions comprising a second type of phosphor configured to convert light emitted by the diode structure to a second wavelength that is different from the first wavelength, wherein the second plurality of spaced apart phosphor containing regions are free of the first type of phosphor; wherein adjacent ones of the first plurality of phosphor-containing regions are spaced apart from one another on the external surface of the diode structure with intervening ones of the second plurality of phosphor containing regions therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15, 16, 17)
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- 11. The semiconductor device of claim I, wherein the first plurality of spaced apart phosphor containing regions and the second plurality of spaced apart phosphor containing regions are arranged in an alternating pattern on the surface of the diode structure.
Specification