×

(Al,Ga,In)N diode laser fabricated at reduced temperature

  • US 9,054,498 B2
  • Filed: 06/18/2014
  • Issued: 06/09/2015
  • Est. Priority Date: 06/17/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabricating a III-Nitride diode laser, the method comprising:

  • forming a III-Nitride layer on or above a growth substrate, wherein the III-Nitride layer is formed, using at least deposition, at a first temperature, and wherein the III-Nitride layer comprises an indium-containing active region; and

    performing at least one subsequent fabrication process at a second temperature that is lower than the first temperature to inhibit degradation of the indium-containing active region, wherein the subsequent fabrication process comprise forming a conducting oxide waveguide or cladding layer on or above the III-Nitride layers at the second temperature.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×