(Al,Ga,In)N diode laser fabricated at reduced temperature
First Claim
Patent Images
1. A method of fabricating a III-Nitride diode laser, the method comprising:
- forming a III-Nitride layer on or above a growth substrate, wherein the III-Nitride layer is formed, using at least deposition, at a first temperature, and wherein the III-Nitride layer comprises an indium-containing active region; and
performing at least one subsequent fabrication process at a second temperature that is lower than the first temperature to inhibit degradation of the indium-containing active region, wherein the subsequent fabrication process comprise forming a conducting oxide waveguide or cladding layer on or above the III-Nitride layers at the second temperature.
0 Assignments
0 Petitions
Accused Products
Abstract
A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
-
Citations
26 Claims
-
1. A method of fabricating a III-Nitride diode laser, the method comprising:
-
forming a III-Nitride layer on or above a growth substrate, wherein the III-Nitride layer is formed, using at least deposition, at a first temperature, and wherein the III-Nitride layer comprises an indium-containing active region; and performing at least one subsequent fabrication process at a second temperature that is lower than the first temperature to inhibit degradation of the indium-containing active region, wherein the subsequent fabrication process comprise forming a conducting oxide waveguide or cladding layer on or above the III-Nitride layers at the second temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A III-Nitride diode laser, comprising:
-
a III-Nitride layer formed on or above a growth substrate, wherein the III-Nitride layer is formed at a first temperature, and wherein one or more of the III-Nitride layers comprise an indium-containing active region; and a conducting oxide waveguide or cladding layers formed on or above the III-Nitride layers at a second temperature that is lower than the first temperature to inhibit degradation of the indium-containing active region. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
Specification