Low drop diode equivalent circuit

• US 9,054,585 B2
• Filed: 03/08/2013
• Issued: 06/09/2015
• Est. Priority Date: 11/06/2012
• Status: Active Grant

• Current Assignee: Department of Electronics and Information Technology, Indian Institute of Science
• Original Assignee: Department of Electronics and Information Technology, Indian Institute of Science
• Inventors: Amrutur, Bharadwaj, Karthikeyan, Laxmi
• Primary Examiner(s): LUU, AN T
• Application Number:
  US13/790,075
• Publication Number:
  US 20140126260A1
• Time in Patent Office: 823 Days
• Field of Search: 327420-421, 327423-427, 327502-504
• US Class Current: 1/1
• CPC Class Codes: H02M 7/217 using semiconductor devices only
• CPC Class Codes: H02M 7/2195 the switches being synchronously commutated at the same frequency of the AC input voltage
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

Embodiments of the disclosure relate to a low drop diode equivalent circuit. Piezoelectric device based vibration energy harvesting requires a rectifier for conversion of input ac to usable dc form. Power loss due to diode drop in rectifier is a significant fraction of the already low levels of harvested power. The low-drop-diode equivalent can replace the rectifier diodes and minimize power loss. The diode equivalent mimics a diode using linear region operated MOSFET. The diode equivalent is powered directly from input signal and requires no additional power supply for its control. Power used by the control circuit is kept at a value which gives an overall output power improvement. The diode equivalent replaces the four diodes in a full wave bridge rectifier, which is the basic full-wave rectifier and is a part of the more advanced rectifiers like switch-only and bias-flip rectifiers.

Claims

1. A low drop diode equivalent circuit comprising:

an input is a first terminal of a switch metal oxide semiconductor field effect transistor (MOSFET) (M₁), a second terminal forming an output, a third terminal to provide a control input, said input is also being coupled to one terminal of a sense transistor (T₁), a second terminal of said sense transistor is coupled to the output, a third terminal of said sense transistor is connected to a control transistor (T₂) for providing control input to the switch MOSFET (M₁), a discharge MOSFET (M₂) is connected across the second terminal and the third terminal of the switch MOSFET (M₁), and a third terminal of discharge MOSFET (M₂) is connected to a source providing reverse signal (R) for switching OFF the diode equivalent.

2. The diode equivalent circuit as claimed in claim 1, wherein the switch MOSFET (M₁) is p-channel MOSFET, the discharge MOSFET (M₂) is n-channel MOSFET, the sense transistor (T₁) is p-n-p BJT and the control transistor (T₂) is an n-p-n BJT.

3. The diode equivalent circuit as claimed in claim 2, wherein the input is anode and the output is cathode of the diode equivalent circuit.

4. The diode equivalent circuit as claimed in claim 2, wherein the emitter terminal of the control transistor (T₂) is a control reference (C), an additional third terminal of the diode equivalent, which is to be connected to a point in the circuit which when the diode equivalent is conducting, would be at least one threshold voltage below the point to which anode of diode equivalent is connected.

5. The diode equivalent circuit as claimed in claim 2, wherein when the diode equivalent is forward biased, the emitter-base junction of the sense transistor (T₁) is operated in forward bias and the sense transistor (T₁) conducts and provides required current for making the control transistor conduct.

6. The diode equivalent circuit as claimed in claim 2, wherein the control transistor (T₂) conducts to charge the gate-source capacitance of the switch MOSFET (M₁).

7. The diode equivalent circuit as claimed in claim 2, wherein the switch MOSFET (M₁) conducts when source-gate voltage exceeds a predefined threshold voltage of M₁.

8. The diode equivalent circuit as claimed in claim 2, wherein the source-gate voltage keeps increasing and the switch MOSFET enters from saturation region to linear region of conduction, and said conduction in the linear region provides low voltage drop across the input and output of diode equivalent, which ranges in terms of tens of millivolts.

9. The diode equivalent circuit as claimed in claim 2, wherein when the switch MOSFET (M₁) is conducting in linear region, the voltage across emitter-base junction of the sense transistor (T₁) reduces, thereby turning OFF the sense transistor (T₁).

10. The diode equivalent circuit as claimed in claim 2, wherein the control transistor (T₂) is turned OFF when the sense transistor (T₁) is switched OFF.

11. The diode equivalent circuit as claimed in claim 2, wherein the switch MOSFET (M₁) continues to operate in linear region as gate-source capacitance of M₁ has no discharge path.

12. The diode equivalent circuit as claimed in claim 2, wherein reverse biasing of the diode equivalent generates a reverse signal (R) to turn ON the discharge MOSFET (M₂), thereby discharging drain-gate capacitance of switch MOSFET (M₁) and turning OFF M₁ to prevent reverse conduction of the diode equivalent circuit.

13. The diode equivalent circuit as claimed in claim 2, wherein the switch MOSFET is n-channel, the discharge MOSFET is p-channel, the sense transistor is n-p-n BJT and the control transistor is p-n-p BJT, and is the complementary counterpart to the diode equivalent circuit.