Controlled spalling of group III nitrides containing an embedded spall releasing plane
First Claim
1. A method for removing a portion of a Group III nitride material from a Group III nitride layer, said method comprising:
- forming a Group III nitride material layer on a surface of a substrate, wherein said Group III nitride material layer comprises a spall releasing plane containing at least one type of impurity atom embedded within said Group III nitride material layer and wherein said forming said Group III nitride material layer comprises first growing a lower portion of said Group III nitride material layer on said substrate, second growing said spall releasing plane, and third growing an upper portion of said Group III nitride material layer on said spall releasing plane;
forming a semiconductor device layer on said upper portion of said Group III nitride material layerforming a stressor layer atop an uppermost surface of said semiconductor device layer; and
removing said upper portion of said Group III nitride material layer and said semiconductor device layer by spalling to provide a spalled structure comprising said stressor layer, said semiconductor device layer and said upper portion of said Group III nitride material layer.
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Abstract
A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer.
21 Citations
19 Claims
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1. A method for removing a portion of a Group III nitride material from a Group III nitride layer, said method comprising:
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forming a Group III nitride material layer on a surface of a substrate, wherein said Group III nitride material layer comprises a spall releasing plane containing at least one type of impurity atom embedded within said Group III nitride material layer and wherein said forming said Group III nitride material layer comprises first growing a lower portion of said Group III nitride material layer on said substrate, second growing said spall releasing plane, and third growing an upper portion of said Group III nitride material layer on said spall releasing plane; forming a semiconductor device layer on said upper portion of said Group III nitride material layer forming a stressor layer atop an uppermost surface of said semiconductor device layer; and removing said upper portion of said Group III nitride material layer and said semiconductor device layer by spalling to provide a spalled structure comprising said stressor layer, said semiconductor device layer and said upper portion of said Group III nitride material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification