Semiconductor device and manufacturing method thereof
First Claim
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1. A display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a gate electrode over the substrate, a gate insulating film over the gate electrode;
a capacitor wiring line over the substrate, wherein the capacitor wiring line comprises a same material as the gate electrode;
a first insulating film over the capacitor wiring line;
a first conductive layer over the first insulating film and electrically connected to a drain of the thin film transistor wherein a capacitor is formed between the capacitor wiring line and the first conductive layer with at least the first insulating film interposed therebetween;
a second insulating film comprising a resin over the thin film transistor and the first conductive layer wherein at least a portion of the second insulating film has a roughened upper surface;
a pixel electrode including a reflective conductive film over the second insulating film and electrically connected to the first conductive layer through a hole in the second insulating film wherein at least a portion of the reflective conductive film has a rough surface due to the roughened upper surface of the second insulating film.
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Abstract
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, FIG. 2.
286 Citations
20 Claims
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1. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a gate electrode over the substrate, a gate insulating film over the gate electrode; a capacitor wiring line over the substrate, wherein the capacitor wiring line comprises a same material as the gate electrode; a first insulating film over the capacitor wiring line; a first conductive layer over the first insulating film and electrically connected to a drain of the thin film transistor wherein a capacitor is formed between the capacitor wiring line and the first conductive layer with at least the first insulating film interposed therebetween; a second insulating film comprising a resin over the thin film transistor and the first conductive layer wherein at least a portion of the second insulating film has a roughened upper surface; a pixel electrode including a reflective conductive film over the second insulating film and electrically connected to the first conductive layer through a hole in the second insulating film wherein at least a portion of the reflective conductive film has a rough surface due to the roughened upper surface of the second insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a gate electrode over the substrate, a gate insulating film over the gate electrode; a capacitor wiring line over the substrate, wherein the capacitor wiring line comprises a same material as the gate electrode; a first insulating film over the capacitor wiring line; a first conductive layer over the first insulating film and electrically connected to a drain of the thin film transistor, wherein a capacitor is formed between the capacitor wiring line and the first conductive layer with at least the first insulating film interposed therebetween; a second insulating film comprising a resin over the thin film transistor and the first conductive layer wherein at least a portion of the second insulating film has a roughened upper surface; and a pixel electrode including a reflective conductive film over the second insulating film and electrically connected to the first conductive layer through a hole in the second insulating film wherein at least a portion of the reflective conductive film has a rough surface due to the roughened upper surface of the second insulating film, wherein the capacitor wiring line and the gate electrode are formed by patterning a first conductive film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a gate electrode over the substrate, a gate insulating film over the gate electrode; a gate wiring over the substrate, wherein the gate electrode is electrically connected to the gate wiring; a capacitor wiring line over the substrate, wherein the capacitor wiring line extends in parallel with the gate wiring and overlaps with the gate wiring; a first insulating film over the capacitor wiring line; a first conductive layer over the first insulating film and electrically connected to a drain of the thin film transistor wherein a capacitor is formed between the capacitor wiring line and the first conductive layer with at least the first insulating film interposed therebetween; a second insulating film comprising a resin over the thin film transistor and the first conductive layer wherein at least a portion of the second insulating film has a roughened upper surface; a pixel electrode including a reflective conductive film over the second insulating film and electrically connected to the first conductive layer through a hole in the second insulating film wherein at least a portion of the reflective conductive film has a rough surface due to the roughened upper surface of the second insulating film. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification