Semiconductor device
First Claim
1. A display device comprising:
- a pixel electrode; and
a transistor,wherein the transistor comprises;
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film including a channel formation region;
a metal oxide film over the oxide semiconductor film; and
a source electrode and a drain electrode over and in contact with the oxide semiconductor film and the metal oxide film,wherein the metal oxide film overlaps the channel formation region,wherein the oxide semiconductor film contains one or more metal elements, andwherein the metal oxide film contains at least one of the metal elements contained in the oxide semiconductor film, andwherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode.
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Accused Products
Abstract
An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.
154 Citations
23 Claims
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1. A display device comprising:
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a pixel electrode; and a transistor, wherein the transistor comprises; a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film including a channel formation region; a metal oxide film over the oxide semiconductor film; and a source electrode and a drain electrode over and in contact with the oxide semiconductor film and the metal oxide film, wherein the metal oxide film overlaps the channel formation region, wherein the oxide semiconductor film contains one or more metal elements, and wherein the metal oxide film contains at least one of the metal elements contained in the oxide semiconductor film, and wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising:
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a pixel electrode; and a transistor, wherein the transistor comprises; an oxide semiconductor film including a channel formation region; a metal oxide film over the oxide semiconductor film; a source electrode and a drain electrode over and in contact with the oxide semiconductor film and the metal oxide film, a gate insulating film over the oxide semiconductor film, the metal oxide film, the source electrode and the drain electrode; and a gate electrode over the gate insulating film, wherein the metal oxide film overlaps the channel formation region, wherein the oxide semiconductor film contains one or more metal elements, and wherein the metal oxide film contains at least one of the metal elements contained in the oxide semiconductor film, and wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A display device comprising:
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a pixel electrode; and a transistor; wherein the transistor comprises; a gate electrode; a gate insulating film over the gate electrode; a first metal oxide film over the gate insulating film; an oxide semiconductor film including a channel formation region over the first metal oxide film; a second metal oxide film over the oxide semiconductor film; and a source electrode and a drain electrode over and in contact with the oxide semiconductor film and the second metal oxide film, wherein the channel formation region is between the first metal oxide film and the second metal oxide film, wherein the oxide semiconductor film contains one or more metal elements, and wherein the first metal oxide film and the second metal oxide film contain at least one of the metal elements contained in the oxide semiconductor film, and wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification