Semiconductor device and method for manufacturing semiconductor device

• US 9,059,219 B2
• Filed: 06/06/2013
• Issued: 06/16/2015
• Est. Priority Date: 06/27/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sasagawa, Shinya, Fujiki, Hiroshi
• Primary Examiner(s): Roman, Angel
• Application Number:
  US13/911,476
• Publication Number:
  US 20140004656A1
• Time in Patent Office: 740 Days
• Field of Search: 438/104
• US Class Current: 1/1
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided is a method for manufacturing a transistor by which the defective shape of a semiconductor device is prevented in the case where a source electrode layer and a drain electrode layer are formed on an oxide semiconductor film. A source electrode layer and a drain electrode layer are formed each having a cross-sectional shape with which disconnection of a gate insulating film is unlikely to occur even when the gate insulating film over the source electrode layer and the drain electrode layer has a small thickness. An oxide semiconductor film having a crystal structure over an insulating surface is formed; an electrode layer on the oxide semiconductor film is formed; and a thickness of an exposed portion of the oxide semiconductor film is reduced by exposing the oxide semiconductor film to dilute hydrofluoric acid with a concentration higher than 0.0001% and lower than or equal to 0.25%.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and

exposing a part of the oxide semiconductor layer to diluted hydrofluoric acid after the formation of the source electrode layer and the drain electrode layer,

wherein a concentration of the diluted hydrofluoric acid is higher than 0.0001% and lower than or equal to 0.25%.

2. The method according to claim 1, wherein the oxide semiconductor layer has a crystal structure.

3. The method according to claim 1, wherein the step of forming the oxide semiconductor layer comprises the steps of:

forming a first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer; and

forming a third oxide semiconductor layer over the second oxide semiconductor layer.

4. The method according to claim 1, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

5. The method according to claim 1, further comprising the step of:

forming a gate electrode layer before the formation of the oxide semiconductor layer.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer over an insulating surface;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

exposing a part of the oxide semiconductor layer to diluted hydrofluoric acid after the formation of the source electrode layer and the drain electrode layer;

forming an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and

forming a gate electrode layer over the insulating layer, the gate electrode layer overlapping with the oxide semiconductor layer,

wherein a concentration of the diluted hydrofluoric acid is higher than 0.0001% and lower than or equal to 0.25%.

7. The method according to claim 6, wherein the oxide semiconductor layer has a crystal structure.

8. The method according to claim 6, wherein the step of forming the oxide semiconductor layer comprises the steps of:

forming a first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer; and

forming a third oxide semiconductor layer over the second oxide semiconductor layer.

9. The method according to claim 6, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

10. The method according to claim 6, wherein the step of forming the gate electrode layer comprises the steps of:

forming a first gate electrode layer; and

forming a second gate electrode layer over the first gate electrode layer.

11. The method according to claim 6, further comprising the step of:

forming a wiring electrically connected to one of the source electrode layer and the drain electrode layer,

wherein the wiring comprises copper.

12. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode layer over an insulating surface;

forming a first insulating layer over the first electrode layer;

forming an oxide semiconductor layer over the first insulating layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

exposing a part of the oxide semiconductor layer to diluted hydrofluoric acid after the formation of the source electrode layer and the drain electrode layer;

forming a second insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and

forming a second electrode layer over the second insulating layer, the second electrode layer overlapping with the oxide semiconductor layer,

wherein a concentration of the diluted hydrofluoric acid is higher than 0.0001% and lower than or equal to 0.25%.

13. The method according to claim 12 wherein the oxide semiconductor layer has a crystal structure.

14. The method according to claim 12, wherein the step of forming the oxide semiconductor layer comprises the steps of:

forming a first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer; and

forming a third oxide semiconductor layer over the second oxide semiconductor layer.

15. The method according to claim 12, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

16. The method according to claim 12, wherein the step of forming the second electrode layer comprises the steps of:

forming a first gate electrode layer; and

forming a second gate electrode layer over the first gate electrode layer.

17. The method according to claim 12, further comprising the step of:

forming a wiring electrically connected to one of the source electrode layer and the drain electrode layer,

wherein the wiring comprises copper.

18. The method according to claim 12, wherein the first electrode layer is a back gate electrode layer.

19. The method according to claim 12, wherein the first electrode layer overlaps with the oxide semiconductor layer.

20. The method according to claim 12, further comprising the step of:

adding oxygen to the first insulating layer.