Method for adjusting target layout based on intensity of background light in etch mask layer
First Claim
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1. A system for forming a semiconductor circuit, comprising:
- a target-layout generator configured to generate target layout data; and
a patterning apparatus configured to receive the target layout data from the target-layout generator,the patterning apparatus configured to adjust the target layout data based on an intensity of background light that leaks from an exposed region of an etch mask layer to an unexposed region of the etch mask layer,the patterning apparatus configured to divide the target layout data into a plurality of fragmentations,the patterning apparatus configured to independently adjust a size of each of the plurality of fragmentations, andthe patterning apparatus configured to pattern a semiconductor substrate based on the adjusted target layout data.
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Abstract
A method of forming a semiconductor circuit includes receiving target layout. An optical proximity correction process is performed on the target layout data to generate a post-OPC layout. A patterning process is performed using the post-OPC layout. The post-OPC layout may be adjusted to compensate for a top loss of an etch mask layer.
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Citations
10 Claims
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1. A system for forming a semiconductor circuit, comprising:
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a target-layout generator configured to generate target layout data; and a patterning apparatus configured to receive the target layout data from the target-layout generator, the patterning apparatus configured to adjust the target layout data based on an intensity of background light that leaks from an exposed region of an etch mask layer to an unexposed region of the etch mask layer, the patterning apparatus configured to divide the target layout data into a plurality of fragmentations, the patterning apparatus configured to independently adjust a size of each of the plurality of fragmentations, and the patterning apparatus configured to pattern a semiconductor substrate based on the adjusted target layout data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification