Process for providing a magnetic recording transducer with enhanced pinning layer stability

• US 9,064,534 B1
• Filed: 11/30/2012
• Issued: 06/23/2015
• Est. Priority Date: 11/30/2012
• Status: Expired due to Fees

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: Western Digital Corporation
• Inventors: Zheng, Yuankai, Leng, Qunwen, Yang, Cheng-Han
• Primary Examiner(s): Kim, Paul D
• Application Number:
  US13/691,729
• Time in Patent Office: 935 Days
• Field of Search: 296/030.7, 296/030.8, 2960311-60316, 296/031.8, 360/324.2, 360/324.1, 451/5, 451/41
• US Class Current: 1/1
• CPC Class Codes: G11B 5/3109 Details G11B5/3103 takes precedence
• CPC Class Codes: G11B 5/3163 Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Abstract

A method is provided for providing a magnetic recording transducer having a pinning layer with high pinning field stability. A bottom structure comprising a substrate, a magnetic shield above the substrate, a magnetic seed layer above the shield, a nonmagnetic spacer layer above the magnetic seed layer, and a layer of antiferromagnetic (AFM) material on the nonmagnetic spacer layer is provided. The bottom structure is heated to a temperature of at least 373 Kelvin (K) and then the bottom structure is cooled until the temperature of the structure is reduced to less than 293K. A pinned layer is deposited on the AFM layer, a nonmagnetic spacer is provided on the pinned layer, and a read sensor fabricated above the nonmagnetic spacer. In one embodiment, cooling the structure comprises reducing the temperature of the structure by at least 100K in less than 25 minutes.

Claims

1. A method for providing a magnetic recording transducer with high pinning field stability, the method comprising:

providing a bottom structure comprising a substrate, a magnetic shield above the substrate, a magnetic seed layer above the shield, a first nonmagnetic spacer layer above the magnetic seed layer, and a layer of antiferromagnetic (AFM) material on the first nonmagnetic spacer layer;

heating the bottom structure to a temperature of at least 373 Kelvin (K);

cooling the bottom structure until the temperature of the bottom structure is reduced to less than 293K;

depositing a pinned layer on the AFM layer;

providing a second nonmagnetic spacer on the pinned layer, and

providing a top structure on the second nonmagnetic spacer.

2. The method of claim 1 wherein the cooling the bottom structure comprises reducing the temperature of the bottom structure by at least 100K in less than 25 minutes.

3. The method of claim 1 wherein the cooling the bottom structure comprises application of a cooling plate that has a surface temperature between 50K and 270K to the structure.

4. The method of claim 1 wherein the cooling the bottom structure comprises subjecting the bottom structure to a cooling gas.

5. The method of claim 4 wherein the cooling gas comprises cryogenic nitrogen or helium.

6. The method of claim 1 wherein the AFM material comprises one of IrMn, RhMn, RuMn, or FeMn.

7. The method of claim 1 wherein the AFM material comprises one of PtMn, NiMn, PdMn, or PtPdMn.

8. The method of claim 1 wherein the pinned layer comprises CoFe or CoFeB.

9. The method of claim 1 wherein the AFM material comprises IrMn and the pinned layer comprises CoFe or CoFeB.

10. The method of claim 1 wherein after providing the top structure, the bottom structure, the pinned layer, the second nonmagnetic layer, and the top structure together are annealed at a temperature of at least 540K for at least one hour.

11. The method of claim 1, wherein the top structure comprises a reference layer above the second nonmagnetic layer, a barrier layer above the reference layer, a free layer above the barrier layer, and a capping layer above the free layer.

12. The method of claim 11, wherein the magnetic seed layer, the first nonmagnetic spacer layer, the AFM layer, the pinned layer, the second nonmagnetic spacer layer, the reference layer, the barrier layer, the free layer, and the capping layer together comprise a read sensor.

13. The method of claim 12, further comprising annealing the substrate, the magnetic shield, and the read sensor together at a temperature of at least 540K for at least one hour.