Analog floating-gate memory manufacturing process implementing n-channel and p-channel MOS transistors
First Claim
1. A method of fabricating an electrically programmable capacitor structure for an analog semiconductor integrated circuit, formed at a semiconductor surface of a body, comprising the steps of:
- forming isolation dielectric structures at selected locations of the semiconductor surface, the isolation dielectric structures defining active regions of the surface therebetween;
forming a gate dielectric layer over the active regions;
then forming an electrode layer comprised of polycrystalline silicon overall;
removing selected portions of the electrode layer to define a first electrode comprised of polycrystalline silicon;
the first electrode including a portion overlying an isolation dielectric structure and a plurality of portions overlying active regions;
doping the polycrystalline silicon to a first conductivity type;
performing an ion implantation of dopant of a second conductivity type, opposite to the first conductivity type, into a first active region to define a buried transistor channel;
forming source and drain regions of the second conductivity type on opposite sides of a portion of the first electrode overlying the first active region;
then depositing a dielectric film overall;
then depositing a conductor layer comprising a metal; and
removing selected portions of the conductor layer to define a first conductive plate overlying the dielectric film and a portion of the first electrode, at a location overlying an isolation dielectric structure.
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Accused Products
Abstract
An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, doped n-type throughout its length, and includes portions serving as gate electrodes of n-channel and p-channel MOS transistors; a plate of a metal-to-poly storage capacitor; and a plate of poly-to-active tunneling capacitors. The p-channel MOS transistor includes a buried channel region, formed by way of ion implantation, disposed between its source and drain regions. Silicide-block silicon dioxide blocks the formation of silicide cladding on the electrode, while other polysilicon structures in the integrated circuit are silicide-clad.
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Citations
5 Claims
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1. A method of fabricating an electrically programmable capacitor structure for an analog semiconductor integrated circuit, formed at a semiconductor surface of a body, comprising the steps of:
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forming isolation dielectric structures at selected locations of the semiconductor surface, the isolation dielectric structures defining active regions of the surface therebetween; forming a gate dielectric layer over the active regions; then forming an electrode layer comprised of polycrystalline silicon overall; removing selected portions of the electrode layer to define a first electrode comprised of polycrystalline silicon;
the first electrode including a portion overlying an isolation dielectric structure and a plurality of portions overlying active regions;doping the polycrystalline silicon to a first conductivity type; performing an ion implantation of dopant of a second conductivity type, opposite to the first conductivity type, into a first active region to define a buried transistor channel; forming source and drain regions of the second conductivity type on opposite sides of a portion of the first electrode overlying the first active region; then depositing a dielectric film overall; then depositing a conductor layer comprising a metal; and removing selected portions of the conductor layer to define a first conductive plate overlying the dielectric film and a portion of the first electrode, at a location overlying an isolation dielectric structure. - View Dependent Claims (2, 3, 4, 5)
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Specification