Semiconductor laser element

• US 9,065,252 B2
• Filed: 12/04/2013
• Issued: 06/23/2015
• Est. Priority Date: 12/06/2012
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Miyoshi, Takashi
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): CARTER, MICHAEL W
• Application Number:
  US14/096,782
• Publication Number:
  US 20140161145A1
• Time in Patent Office: 566 Days
• Field of Search: 372/45.01
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/2031 characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/3013 AIIIBV compounds
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/3213 asymmetric clading layers
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.

Claims

1. A semiconductor laser element comprising:

a substrate of GaN;

a first nitride semiconductor layer of AlGaN on or above the substrate;

a second nitride semiconductor layer of AlGaN on or above the first nitride semiconductor layer, the second nitride semiconductor layer having an Al ratio higher than the first nitride semiconductor layer;

a third nitride semiconductor layer of an InGaN on or above the second nitride semiconductor layer; and

a fourth nitride semiconductor layer of AlGaN on or above the third nitride semiconductor layer, the fourth nitride semiconductor layer having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer; and

a light emitting layer of a nitride semiconductor on or above the fourth nitride semiconductor layer, the light emitting layer having a refractive index higher than the substrate.

2. The semiconductor laser element according to claim 1, wherein the semiconductor laser element is configured to emit light having a lasing wavelength of 480 nm or more.

3. The semiconductor laser element according to claim 1, wherein a thickness of the second nitride semiconductor layer and a thickness of the fourth nitride semiconductor layer are 100 nm or more.

4. The semiconductor laser element according to claim 3, wherein a thickness of the third nitride semiconductor layer is 50 nm or more.

5. The semiconductor laser element according to claim 4, wherein a thickness of the first nitride semiconductor layer is 100 nm or more.

6. The semiconductor laser element according to claim 5, wherein a thickness of the first nitride semiconductor layer is larger than a total thickness of the second nitride semiconductor layer and fourth nitride semiconductor layer.

7. The semiconductor laser element according to claim 1, wherein a thickness of the third nitride semiconductor layer is 50 nm or more.

8. The semiconductor laser element according to claim 1, wherein a thickness of the first nitride semiconductor layer is 100 nm or more.

9. The semiconductor laser element according to claim 1, wherein a thickness of the first nitride semiconductor layer is larger than thicknesses of the second and fourth nitride semiconductor layer.

10. The semiconductor laser element according to claim 1, wherein a thickness of the first nitride semiconductor layer is larger than a total thickness of the second nitride semiconductor layer and fourth nitride semiconductor layer.

11. The semiconductor laser element according to claim 1, comprising a quantum well layer as the light emitting layer and barrier layers sandwiching the quantum well layer, wherein the first, second and fourth nitride semiconductor layers have a refractive index lower than a refractive index of the barrier layers.

12. The semiconductor laser element according to claim 1, wherein the semiconductor laser element is configured to emit light having a lasing wavelength of between 480 nm and 550 nm.

13. A semiconductor laser element comprising:

a substrate of AlGaN;

a first nitride semiconductor layer of AlGaN on or above the substrate;

a second nitride semiconductor layer of AlGaN on or above the first nitride semiconductor layer, the second nitride semiconductor layer having an Al ratio higher than the first nitride semiconductor layer;

a third nitride semiconductor layer of an InGaN on or above the second nitride semiconductor layer; and

a fourth nitride semiconductor layer of AlGaN on or above the third nitride semiconductor layer, the fourth nitride semiconductor layer having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer; and

a light emitting layer of a nitride semiconductor on or above the fourth nitride semiconductor layer, the light emitting layer having a refractive index higher than the substrate.

14. The semiconductor laser element according to claim 13, wherein the semiconductor laser element is configured to emit light having a lasing wavelength of 480 nm or more.

15. The semiconductor laser element according to claim 13, wherein a thickness of the second nitride semiconductor layer and a thickness of the fourth nitride semiconductor layer are 100 nm or more.

16. The semiconductor laser element according to claim 13, wherein a thickness of the third nitride semiconductor layer is 50 nm or more.

17. The semiconductor laser element according to claim 13, wherein a thickness of the first nitride semiconductor layer is 100 nm or more.

18. The semiconductor laser element according to claim 13, wherein a thickness of the first nitride semiconductor layer is larger than thicknesses of the second and fourth nitride semiconductor layer.

19. The semiconductor laser element according to claim 13, wherein a thickness of the first nitride semiconductor layer is larger than a total thickness of the second nitride semiconductor layer and fourth nitride semiconductor layer.

20. The semiconductor laser element according to claim 13, comprising a quantum well layer as the light emitting layer and barrier layers sandwiching the quantum well layer, wherein the first, second and fourth nitride semiconductor layers have a refractive index lower than a refractive index of the barrier layers.

21. The semiconductor laser element according to claim 13, wherein the semiconductor laser element is configured to emit light having a lasing wavelength of between 480 nm and 550 nm.

22. The semiconductor laser element according to claim 13, wherein the first nitride semiconductor layer has an Al ratio higher than the substrate.