Liquid crystal display device

• US 9,069,202 B2
• Filed: 02/29/2012
• Issued: 06/30/2015
• Est. Priority Date: 03/11/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyairi, Hidekazu, Ishitani, Tetsuji, Kubota, Daisuke, Isa, Toshiyuki, Toyotaka, Kouhei, Kawashima, Susumu
• Primary Examiner(s): Kim, Richard
• Assistant Examiner(s): CROCKETT, RYAN M
• Application Number:
  US13/407,891
• Publication Number:
  US 20120229747A1
• Time in Patent Office: 1,217 Days
• Field of Search: 349/43, 349/139, 349/148
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13606 having means for reducing parasitic capacitance
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 2201/124 interdigital

Abstract

Provided are a liquid crystal display device with horizontal electric field mode, in which a decrease in driving speed can be suppressed by reducing the resistance of a wiring even when the number of pixels is increased, and a manufacturing method thereof. One of a scan wiring and a signal wiring is divided in an intersection portion where the scan wiring and the signal wiring intersect with each other, and the separated wirings are connected with a connection electrode positioned over a thick insulating film. Accordingly, parasitic capacitance at the intersection portion can be reduced, preventing the decrease in the driving speed. The connection electrode is formed at the same time as formation of a pixel electrode and a common electrode using a low-resistance metal, which contributes to the reduction in manufacturing process of the liquid crystal display device.

Claims

1. A liquid crystal display device comprising:

a first pixel and a second pixel which is adjacent to the first pixel, each of the first pixel and the second pixel comprising;

a first wiring;

a first insulating film over the first wiring;

a second wiring over the first insulating film, the second wiring being perpendicular to the first wiring;

a transistor comprising a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode;

a second insulating film over the first insulating film and the transistor;

a third insulating film over the second insulating film; and

a substrate over the third insulating film,

wherein the second wiring in the first pixel is spaced from the second wiring in the second pixel,

wherein the second wiring in the first pixel and the second wiring in the second pixel are electrically connected to each other with a connection electrode which is located over the second insulating film,

wherein the first insulating film and the gate insulating film exist in the same layer,

wherein the third insulating film is located over the connection electrode,

wherein the third insulating film is configured to adjust a cell gap of the liquid crystal display device, and

wherein the third insulating film is in contact with the connection electrode and the substrate.

2. The liquid crystal display device according to claim 1,

wherein the first insulating film has a step caused by the first wiring, and

wherein the second insulating film is configured to absorb the step to give a planar surface.

3. The liquid crystal display device according to claim 1,

wherein the connection electrode is electrically connected to the source electrode of the transistor.

4. The liquid crystal display device according to claim 1,

wherein the first wiring and the gate electrode exist in the same layer.

5. The liquid crystal display device according to claim 1,

wherein the second insulating film is in contact with the connection electrode.

6. The liquid crystal display device according to claim 1,

wherein the second insulating film has a thickness more than or equal to 500 nm and less than or equal to 5 μ

m.

7. The liquid crystal display device according to claim 1, further comprising:

a pixel electrode electrically connected to the drain electrode of the transistor; and

a common electrode positioned between parts of the pixel electrode,

wherein the pixel electrode and the common electrode exist in the same layer as the connection electrode.

8. An electronic device comprising the liquid crystal display device according to claim 1.

9. The liquid crystal display device according to claim 1,

wherein the third insulating film is in contact with the connection electrode.

10. A liquid crystal display device comprising:

a first pixel and a second pixel which is adjacent to the first pixel, each of the first pixel and the second pixel comprising;

a first wiring;

a first insulating film over the first wiring;

a second wiring over the first insulating film, the second wiring being perpendicular to the first wiring and spaced from the second wiring in the other of the first pixel and the second pixel;

a transistor comprising a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode;

a second insulating film over the first insulating film and the transistor;

a connection electrode over the second insulating film, the connection electrode electrically connecting the second wiring in the first pixel to the second wiring in the second pixel;

a third insulating film over and in contact with the connection electrode; and

a substrate over and in contact with the third insulating film,

wherein the first insulating film and the gate insulating film exist in the same layer, and

wherein the connection electrode is a metal film.

11. The liquid crystal display device according to claim 10,

wherein the metal film comprises a metal selected from aluminum copper, titanium, chromium, tantalum, molybdenum, and tungsten.

12. The liquid crystal display device according to claim 10,

wherein the connection electrode is electrically connected to the source electrode of the transistor.

13. The liquid crystal display device according to claim 10,

wherein the first wiring and the gate electrode exist in the same layer.

14. The liquid crystal display device according to claim 10,

wherein the second insulating film is in contact with the connection electrode.

15. The liquid crystal display device according to claim 10,

wherein the second insulating film has a thickness more than or equal to 500 nm and less than or equal to 5 μ

m.

16. The liquid crystal display device according to claim 10, further comprising:

a pixel electrode electrically connected to the drain electrode of the transistor; and

a common electrode positioned between parts of the pixel electrode,

wherein the pixel electrode and the common electrode exist in the same layer as the connection electrode.

17. The liquid crystal display device according to claim 16, further comprising a liquid crystal layer over the pixel electrode and the common electrode,

wherein a thickness of the pixel electrode and a thickness of the common electrode are each more than or equal to 20% and less than or equal to 80% of a thickness of the liquid crystal layer.

18. The liquid crystal display device according to claim 10,

wherein the third insulating film is able to block light.

19. An electronic device comprising the liquid crystal display device according to claim 10.