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Semiconductor device and method of fabricating the same

  • US 9,069,215 B2
  • Filed: 09/09/2009
  • Issued: 06/30/2015
  • Est. Priority Date: 07/06/1999
  • Status: Expired due to Term
First Claim
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1. A display device comprising:

  • a first substrate;

    a gate electrode over the first substrate;

    a semiconductor layer overlapping with the gate electrode;

    a first insulating layer disposed between the gate electrode and the semiconductor layer;

    a first conductive layer over and electrically connected the semiconductor layer;

    a second conductive layer over and electrically connected the semiconductor layer;

    a second insulating layer over the gate electrode, the first conductive layer, and the second conductive layer;

    a pixel electrode over the second insulating layer, the pixel electrode electrically connected to the first conductive layer;

    a second substrate opposed to the first substrate;

    a liquid crystal material disposed between the first substrate and the second substrate;

    a first photolithographic spacer disposed between the first substrate and the second substrate; and

    a second photolithographic spacer disposed between the first substrate and the second substrate,wherein the first photolithographic spacer and the second photolithographic spacer are disposed in a region surrounded by a sealing region,wherein each of the gate electrode, the first insulating layer, the semiconductor layer, the first conductive layer, and the pixel electrode overlaps with the first photolithographic spacer,wherein each of the gate electrode, the semiconductor layer, the first conductive layer, the second conductive layer, and the pixel electrode does not overlap with the second photolithographic spacer, andwherein the first photolithographic spacer has a cross-section in which a width of a second substrate side end portion of the first photolithographic spacer is larger than a width of a center portion of the first photolithographic spacer, and the width of the center portion of the first photolithographic spacer is larger than a width of a first substrate side end portion of the first photolithographic spacer.

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