Cyclic carbosilane dielectric films
First Claim
1. A device comprising,a substrate,a dielectric film disposed on the substrate, wherein the dielectric film is comprised of crosslinked cyclic carbosilanes wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, wherein the dielectric film is porous and the porosity is in the range of 25% to 60%, and wherein the dielectric film comprises between 45 and 60 atomic percent C, between 25 and 35 atomic percent Si, and between 10 and 20 atomic percent O.
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Abstract
Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.
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7 Claims
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1. A device comprising,
a substrate, a dielectric film disposed on the substrate, wherein the dielectric film is comprised of crosslinked cyclic carbosilanes wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, wherein the dielectric film is porous and the porosity is in the range of 25% to 60%, and wherein the dielectric film comprises between 45 and 60 atomic percent C, between 25 and 35 atomic percent Si, and between 10 and 20 atomic percent O.
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