Power storage device

• US 9,070,563 B2
• Filed: 04/04/2014
• Issued: 06/30/2015
• Est. Priority Date: 07/28/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Arai, Yasuyuki
• Primary Examiner(s): Potter, Roy
• Assistant Examiner(s): PATTON, PAUL E
• Application Number:
  US14/245,054
• Publication Number:
  US 20140217414A1
• Time in Patent Office: 452 Days
• Field of Search: 257/57, 257/66, 257/E29.295
• US Class Current: 1/1
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01Q 1/36 Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewithH01Q1/08, H01Q1/14 take precedence
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: H01Q 9/285 Planar dipole H01Q9/065 takes precedence; patch antenna H01Q9/0407
• CPC Class Codes: H02J 50/005 Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices
• CPC Class Codes: H02J 50/10 using inductive coupling
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02J 50/27 characterised by the type of receiving antennas, e.g. rectennas

Abstract

A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented.

Claims

1. A device comprising:

a first structural body comprising an antenna;

a power supply control circuit; and

a second structural body between the first structural body and the power supply control circuit, the second structural body comprising a through electrode formed through the second structural body,

wherein the antenna is a monopole antenna, a dipole antenna, or a patch antenna, and

wherein the antenna and the power supply control circuit are connected with the through electrode.

2. The device according to claim 1, wherein the second structural body has higher rigidity than the first structural body.

3. The device according to claim 1,

wherein the power supply control circuit includes a transistor in which a semiconductor layer is located between an insulating layer over the semiconductor layer and an insulating layer below the semiconductor layer, and

wherein the semiconductor layer is a polycrystalline silicon layer or a single crystalline silicon layer.

4. The device according to claim 1, wherein the second structural body comprises a capacitor.

5. The device according to claim 1, wherein the second structural body comprises a ceramic material.

6. The device according to claim 1, wherein the power supply control circuit comprises a plurality of transistors.

23. The device according to claim 1,

wherein the power supply control circuit includes a MOS transistor.

7. A device comprising:

a first structural body comprising an antenna;

a power supply control circuit; and

a second structural body between the first structural body and the power supply control circuit, the second structural body comprising a through electrode formed through the second structural body,

wherein the antenna has a coil-shape, and

wherein the antenna and the power supply control circuit are connected with the through electrode.

8. The device according to claim 7, wherein the second structural body has higher rigidity than the first structural body.

9. The device according to claim 7,

wherein the power supply control circuit includes a transistor in which a semiconductor layer is located over a substrate having an insulating surface, and

wherein the semiconductor layer is a polycrystalline silicon layer or a single crystalline silicon layer.

10. The device according to claim 7, wherein the second structural body comprises a capacitor.

11. The device according to claim 7, wherein the second structural body comprises a ceramic material.

12. The device according to claim 7, wherein the power supply control circuit comprises a plurality of transistors.

24. The device according to claim 7,

wherein the power supply control circuit includes a MOS transistor.

13. A device comprising:

a first structural body comprising an antenna;

a second structural body comprising a capacitor; and

a power supply control circuit between the first structural body and the second structural body,

wherein the antenna is a monopole antenna, a dipole antenna, or a patch antenna.

14. The device according to claim 13, wherein the second structural body has higher rigidity than the first structural body.

15. The device according to claim 13,

wherein the power supply control circuit includes a transistor in which a semiconductor layer is located over a substrate having an insulating surface, a first connection electrode for electrically connecting with the antenna and a second connection electrode for electrically connecting with the capacitor, and

wherein the semiconductor layer is a polycrystalline silicon layer or a single crystalline silicon layer.

16. The device according to claim 13, wherein the second structural body comprises a ceramic material.

17. The device according to claim 13, wherein the power supply control circuit comprises a plurality of transistors.

25. The device according to claim 13,

wherein the power supply control circuit includes a MOS transistor.

18. A device comprising:

a first structural body comprising an antenna;

a second structural body comprising a capacitor; and

a power supply control circuit between the first structural body and the second structural body,

wherein the antenna has a coil-shape.

19. The device according to claim 18, wherein the second structural body has higher rigidity than the first structural body.

20. The device according to claim 18,

wherein the power supply control circuit includes a transistor in which a semiconductor layer is located over a substrate having an insulating surface, a first connection electrode for electrically connecting with the antenna and a second connection electrode for electrically connecting with the capacitor, and

wherein the semiconductor layer is a polycrystalline silicon layer or a single crystalline silicon layer.

21. The device according to claim 18, wherein the second structural body comprises a ceramic material.

22. The device according to claim 18, wherein the power supply control circuit comprises a plurality of transistors.

26. The device according to claim 18,

wherein the power supply control circuit includes a MOS transistor.