Electronic device including a trench and a conductive structure therein and a process of forming the same
First Claim
1. A process of forming an electronic device comprising:
- forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface;
patterning the semiconductor layer to define a first trench and a second trench that extend from the primary surface towards the substrate;
forming first conductive structures within the first and second trenches;
forming a first insulating member within the first trench after forming the first conductive structures;
forming a gate electrode within the first trench, wherein within the first trench, the first insulating member is disposed between the gate electrode and the first conductive structure;
forming a source region adjacent to the first trench;
forming a second insulating member within the second trench after forming the first conductive structures; and
forming a second conductive structure, wherein within the second trench, the second insulating member is disposed between the second conductive structure and the first conductive structure, wherein the source region is electrically connected to the second conductive structure.
4 Assignments
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Accused Products
Abstract
An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface. The electronic device can further include first conductive structures within each of a first trench and a second trench, a gate electrode within the first trench and electrically insulated from the first conductive structure, a first insulating member disposed between the gate electrode and the first conductive structure within the first trench, and a second conductive structure within the second trench. The second conductive structure can be electrically connected to the first conductive structures and is electrically insulated from the gate electrode. The electronic device can further include a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench. Processing sequences can be used that simplify formation of the features within the electronic device.
28 Citations
20 Claims
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1. A process of forming an electronic device comprising:
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forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface; patterning the semiconductor layer to define a first trench and a second trench that extend from the primary surface towards the substrate; forming first conductive structures within the first and second trenches; forming a first insulating member within the first trench after forming the first conductive structures; forming a gate electrode within the first trench, wherein within the first trench, the first insulating member is disposed between the gate electrode and the first conductive structure; forming a source region adjacent to the first trench; forming a second insulating member within the second trench after forming the first conductive structures; and forming a second conductive structure, wherein within the second trench, the second insulating member is disposed between the second conductive structure and the first conductive structure, wherein the source region is electrically connected to the second conductive structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process of forming an electronic device comprising:
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forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface; patterning the semiconductor layer to define a first trench and a second trench that extend from the primary surface towards the substrate; forming first conductive structures within the first and second trenches; forming a first insulating member within the first trench after forming the first conductive structures; forming a gate electrode within the first trench, wherein within the first trench, the first insulating member is disposed between the gate electrode and the first conductive structure; forming a second insulating member within the second trench after forming the first conductive structures; forming a second conductive structure, wherein within the second trench, the second insulating member is disposed between the second conductive structure and the first conductive structure; forming an oxidation-resistant layer within the first and second trenches; removing portions of the oxidation-resistant layer along bottoms of the first and second trenches to form an oxidation-resistant spacers; thermally oxidizing the semiconductor layer along bottoms of the first and second trenches while the oxidation-resistant spacers are within the first and second trenches; and depositing a silicon layer within the first and second trenches after removing the portions of the oxidation-resistant layer and before forming the first conductive structures, wherein within a finished electronic device, oxide layers within the first and second trenches are thicker along between the first conductive structures and the bottoms of the first and second trenches as compared to the oxide layers between the first conductive structures and the sidewalls of the first and second trenches. - View Dependent Claims (13)
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14. A process of forming an electronic device comprising:
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forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface; patterning the semiconductor layer to define a first trench and a second trench that extend from the primary surface towards the substrate; forming first conductive structures within the first and second trenches; forming a first insulating member within the first trench after forming the first conductive structures; forming a gate electrode within the first trench, wherein within the first trench, the first insulating member is disposed between the gate electrode and the first conductive structure; forming a source region adjacent to the first trench; forming a second insulating member within the second trench after forming the first conductive structures; and forming a second conductive structure, wherein within the second trench, the second insulating member is disposed between the second conductive structure and the first conductive structure, and wherein the first and second conductive structures that lie within the second trench are electrically connected to each other. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification