Terminal structure and semiconductor device

• US 9,070,606 B2
• Filed: 08/06/2013
• Issued: 06/30/2015
• Est. Priority Date: 08/24/2012
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Yoshida, Kenichi, Orikasa, Makoto, Seike, Hideyuki, Horikawa, Yuhei, Abe, Hisayuki
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US13/960,228
• Publication Number:
  US 20140054768A1
• Time in Patent Office: 693 Days
• Field of Search: 257/737, 257/781, 257/738, 257/753, 257/780, 257/E23.021, 257/E23.026
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/0347 using a lift-off mask
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/11464 Electroless plating
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/11849 Reflowing
• CPC Class Codes: H01L 2224/13005 Structure
• CPC Class Codes: H01L 2224/13006 Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height H_bm at which the bump has a maximum diameter (L_bm) is lower than a maximum height H_u of the under-bump metal layer.

Claims

1. A terminal structure comprising:

a base material;

an electrode formed on the base material;

an insulating coating layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode;

an under-bump metal layer filling the opening and covering part of the insulating coating layer; and

a dome-shaped bump covering the under-bump metal layer, wherein

in a cross section along a lamination direction, a height at which the bump has a maximum diameter is lower than a maximum height of the under-bump metal layer.

2. The terminal structure according to claim 1, wherein the bump has a maximum diameter of 5 to 40 μ

m.

3. The terminal structure according to claim 1 wherein the bump contains tin as a main component.

4. The terminal structure according to claim 1, wherein the under-bump metal layer contains nickel as a main component.

5. The terminal structure according to claim 1, wherein the bump contains titanium.

6. A semiconductor device comprising the terminal structure according to claim 1.