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Nitride semiconductor wafer for a high-electron-mobility transistor and its use

  • US 9,070,619 B2
  • Filed: 08/08/2013
  • Issued: 06/30/2015
  • Est. Priority Date: 09/03/2012
  • Status: Active Grant
First Claim
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1. A high-electron-mobility transistor nitride semiconductor wafer, comprising:

  • a substrate;

    a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦

    x≦

    0.05) layer and an AlyGa1-yN (0<

    y≦

    1 and x<

    y) layer;

    a nitride semiconductor channel layer formed on the buffer layer; and

    a nitride semiconductor barrier layer formed on the channel layer,wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor.

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