Nitride semiconductor wafer for a high-electron-mobility transistor and its use
First Claim
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1. A high-electron-mobility transistor nitride semiconductor wafer, comprising:
- a substrate;
a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦
x≦
0.05) layer and an AlyGa1-yN (0<
y≦
1 and x<
y) layer;
a nitride semiconductor channel layer formed on the buffer layer; and
a nitride semiconductor barrier layer formed on the channel layer,wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor.
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Abstract
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0≦x≦0.05) and AlyGa1-yN (0<y≦1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor.
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Citations
20 Claims
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1. A high-electron-mobility transistor nitride semiconductor wafer, comprising:
-
a substrate; a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦
x≦
0.05) layer and an AlyGa1-yN (0<
y≦
1 and x<
y) layer;a nitride semiconductor channel layer formed on the buffer layer; and a nitride semiconductor barrier layer formed on the channel layer, wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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8. A nitride semiconductor wafer for using in a high-electron-mobility transistor, the nitride semiconductor wafer comprising:
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a substrate; a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦
x≦
0.05) layer and an AlyGa1-yN (0<
y≦
1 and x<
y) layer;a nitride semiconductor channel layer formed on the buffer layer; and a nitride semiconductor barrier layer formed on the channel layer, wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor. - View Dependent Claims (19, 20)
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Specification