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Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

  • US 9,070,733 B2
  • Filed: 07/12/2013
  • Issued: 06/30/2015
  • Est. Priority Date: 07/25/2012
  • Status: Active Grant
First Claim
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1. A structure for sensing molecules, the structure comprising:

  • a semiconductor substrate;

    a source region in the semiconductor substrate, the source region comprising a first doped semiconductor region;

    a drain region in the semiconductor substrate, the drain region comprising a second doped semiconductor region;

    a source electrode, contacted to the source region;

    a drain electrode, contacted to the drain region;

    a first insulating layer, covering at least in part one or more of the source electrode, the drain electrode, the source region, the drain region, and the semiconductor substrate;

    a nanopillar, covered by a second insulating layer on bottom and lateral areas of the nanopillar and formed between the source region and the drain region; and

    a functionalized gate electrode on a top area of the nanopillar.

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