Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
First Claim
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1. A structure for sensing molecules, the structure comprising:
- a semiconductor substrate;
a source region in the semiconductor substrate, the source region comprising a first doped semiconductor region;
a drain region in the semiconductor substrate, the drain region comprising a second doped semiconductor region;
a source electrode, contacted to the source region;
a drain electrode, contacted to the drain region;
a first insulating layer, covering at least in part one or more of the source electrode, the drain electrode, the source region, the drain region, and the semiconductor substrate;
a nanopillar, covered by a second insulating layer on bottom and lateral areas of the nanopillar and formed between the source region and the drain region; and
a functionalized gate electrode on a top area of the nanopillar.
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Abstract
Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
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Citations
11 Claims
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1. A structure for sensing molecules, the structure comprising:
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a semiconductor substrate; a source region in the semiconductor substrate, the source region comprising a first doped semiconductor region; a drain region in the semiconductor substrate, the drain region comprising a second doped semiconductor region; a source electrode, contacted to the source region; a drain electrode, contacted to the drain region; a first insulating layer, covering at least in part one or more of the source electrode, the drain electrode, the source region, the drain region, and the semiconductor substrate; a nanopillar, covered by a second insulating layer on bottom and lateral areas of the nanopillar and formed between the source region and the drain region; and a functionalized gate electrode on a top area of the nanopillar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification