Nitride semiconductor light-emitting device and method for producing the same
First Claim
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1. A nitride semiconductor light-emitting device comprising:
- a first conductive-type nitride semiconductor layer;
a superlattice layer provided on said first conductive-type nitride semiconductor layer;
an active layer provided on said superlattice layer; and
a second conductive-type nitride semiconductor layer provided on said active layer, whereinan average carrier concentration of said superlattice layer is higher than an average carrier concentration of said active layer,said superlattice layer is formed of alternate lamination of a doped layer containing a first conductive-type impurity and an undoped layer not containing said first conductive-type impurity,thickness per one layer of said doped layer is greater than or equal to 1.5 nm and less than or equal to 15 nm,thickness per one layer of said undoped layer is greater than or equal to 0.5 nm and less than or equal to 5 nm,each of said doped layer and said undoped layer of the superlattice layer contains In, andsaid active layer generates light, andthe average carrier concentration of said superlattice layer is greater than or equal to 1.2 and smaller than 5 times the average carrier concentration of said active layer.
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Abstract
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
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Citations
18 Claims
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1. A nitride semiconductor light-emitting device comprising:
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a first conductive-type nitride semiconductor layer; a superlattice layer provided on said first conductive-type nitride semiconductor layer; an active layer provided on said superlattice layer; and a second conductive-type nitride semiconductor layer provided on said active layer, wherein an average carrier concentration of said superlattice layer is higher than an average carrier concentration of said active layer, said superlattice layer is formed of alternate lamination of a doped layer containing a first conductive-type impurity and an undoped layer not containing said first conductive-type impurity, thickness per one layer of said doped layer is greater than or equal to 1.5 nm and less than or equal to 15 nm, thickness per one layer of said undoped layer is greater than or equal to 0.5 nm and less than or equal to 5 nm, each of said doped layer and said undoped layer of the superlattice layer contains In, and said active layer generates light, and the average carrier concentration of said superlattice layer is greater than or equal to 1.2 and smaller than 5 times the average carrier concentration of said active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for producing a nitride semiconductor light-emitting device comprising the steps of:
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growing a first conductive-type nitride semiconductor layer on a substrate; growing a superlattice layer on said first conductive-type nitride semiconductor layer; growing an active layer on said superlattice layer; and providing a second conductive-type nitride semiconductor layer on said active layer, wherein a growth rate of said superlattice layer is greater than or equal to a growth rate of a well layer which is a part of said active layer, the step of growing said superlattice layer includes the step of alternately laminating a doped layer containing a first conductive-type impurity and an undoped layer not containing said first conductive-type impurity and growing said superlattice layer having higher average carrier concentration than that of said active layer, thickness per one layer of said doped layer is greater than or equal to 1.5 nm and less than or equal to 15 nm, thickness per one layer of said undoped layer is greater than or equal to 0.5 nm and less than or equal to 5 nm, each of said doped layer and said undoped layer of the superlattice layer contains In, and said active layer generates light, and a growth rate of said undoped layer is greater than or equal to the growth rate of said well layer. - View Dependent Claims (16, 17, 18)
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Specification