Transistor and semiconductor structure
First Claim
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1. A transistor, comprising:
- a source;
a drain; and
a metal gate comprising;
a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the transistor is a PMOS transistor or a NMOS transistor;
a work function metal oxide layer located on the work function metal layer;
a barrier-wetting layer located on the work function metal oxide layer; and
a main electrode located on the barrier-wetting layer.
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Abstract
A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. A semiconductor process forming said semiconductor structure is also provided.
46 Citations
5 Claims
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1. A transistor, comprising:
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a source; a drain; and a metal gate comprising; a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the transistor is a PMOS transistor or a NMOS transistor; a work function metal oxide layer located on the work function metal layer; a barrier-wetting layer located on the work function metal oxide layer; and a main electrode located on the barrier-wetting layer. - View Dependent Claims (2, 3, 4, 5)
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Specification