Gallium and nitrogen containing trilateral configuration for optical devices

• US 9,076,926 B2
• Filed: 02/14/2014
• Issued: 07/07/2015
• Est. Priority Date: 08/22/2011
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Batres, Max, David, Aurelien
• Primary Examiner(s): MENZ, DOUGLAS M
• Application Number:
  US14/181,386
• Publication Number:
  US 20140346524A1
• Time in Patent Office: 508 Days
• Field of Search: 257/76
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.

Claims

1. An optical device comprising a substrate structure, wherein the substrate structure comprises:

a first triangular facet characterized by a first planar surface;

a second triangular facet characterized by a second planar surface; and

three sidewalls connecting the first triangular facet and the second triangular facet, wherein,

each of the three sidewalls comprises a first portion coupled to the first triangular facet and a second portion coupled to the first portion and to the second triangular facet;

each of the first portions is oriented orthogonal to the first triangular facet; and

each of the second portions is oriented non-orthogonal to the first triangular facet.

2. The optical device of claim 1, wherein the first triangular facet is substantially parallel to the second triangular facet.

3. The optical device of claim 1, wherein the substrate structure comprises GaN.

4. The optical device of claim 1, wherein,

the first triangular facet is characterized by a first area;

the second triangular facet is characterized by a second area; and

the first area is less than the second area.

5. The optical device of claim 1, further comprising:

an n-type layer underlying the first triangular facet;

an active layer underlying the n-type layer;

a p-type layer underlying the active layer;

a first contact configured to form a first electrical connection with the p-type layer; and

a second contact configured to form a second electrical connection to the substrate structure.

6. The optical device of claim 1, wherein the substrate structure is characterized by a Cex chip extraction efficiency of at least 50%.

7. The optical device of claim 1, wherein,

the first portion is characterized by a first height h;

the second portion is characterized by a second height k;

a distance between the first triangular facet and the second triangular facet is equal to h+k; and

at least one of the second portions is characterized by a non-orthogonal angle Ψ

relative to the first portion.

8. The optical device of claim 7, wherein a ratio of the first height h and the second height k is about 1:

2.

9. The optical device of claim 7, wherein the first height h, the second height k, and the non-orthogonal angle Ψ

are configured to provide a Cex chip extraction efficiency of at least 50%.

10. The optical device of claim 7, wherein the first height h, the second height k, and the non-orthogonal angle Ψ

are configured to provide an absorption of less than 10%.

11. The optical device of claim 7, wherein the non-orthogonal angle Ψ

is between about 10°

to about 25°

.

12. The optical device of claim 7, wherein,

k is greater than 200 μ

m; and

the non-orthogonal angle Ψ

is between about 10°

to about 25°

.

13. The optical device of claim 7, wherein height h, the height k, and the non-orthogonal angle Ψ

are selected to produce a maximum Cex chip extraction efficiency.

14. The optical device of claim 1, wherein the optical device comprises a plurality of optical devices configured in an array pattern to cause a determined emission pattern in the array pattern.

15. A lamp comprising at least one optical device comprising a substrate structure, wherein the substrate structure comprises:

a first triangular facet characterized by a first planar surface;

a second triangular facet characterized by a second planar surface; and

three sidewalls connecting the first triangular facet and the second triangular facet, wherein,

each of the three sidewalls comprises a first portion coupled to the first triangular facet and a second portion coupled to the first portion and to the second triangular facet;

each of the first portions is oriented orthogonal to the first triangular facet; and

each of the second portions is oriented non-orthogonal to the first triangular facet.

16. The lamp of claim 15, wherein the first triangular facet is substantially parallel to the second triangular facet.

17. The lamp of claim 15, wherein the substrate structure comprises GaN.

18. The lamp of claim 15, wherein,

the first triangular facet is characterized by a first area;

the second triangular facet is characterized by a second area; and

the first area is less than the second area.

19. The lamp of claim 15, further comprising:

an n-type layer underlying the first triangular facet;

an active layer underlying the n-type layer;

a p-type layer underlying the active layer;

a first contact configured to form a first electrical connection with the p-type layer; and

a second contact configured to form a second electrical connection to the substrate structure.

20. The lamp of claim 15, wherein the substrate structure is characterized by a Cex chip extraction efficiency of at least 50%.

21. The lamp of claim 15, wherein,

the first portion is characterized by a first height h;

the second portion is characterized by a second height k;

a distance between the first triangular facet and the second triangular facet is equal to h+k; and

at least one of the second portions is characterized by a non-orthogonal angle Ψ

relative to the first portion.

22. The lamp of claim 21, wherein a ratio of the first height h and the second height k is about 1:

2.

23. The lamp of claim 21, wherein the first height h, the second height k, and the non-orthogonal angle Ψ

are configured to provide a Cex chip extraction efficiency of at least 50%.

24. The lamp of claim 21, wherein the first height h, the second height k, and the non-orthogonal angle Ψ

are configured to provide an absorption of less than 10%.

25. The lamp of claim 21, wherein the non-orthogonal angle Ψ

is between about 10°

to about 25°

.

26. The lamp of claim 21, wherein,

k is greater than 200 μ

m; and

the non-orthogonal angle Ψ

is between about 10°

to about 25°

.

27. The lamp of claim 21, wherein height h, the height k, and the non-orthogonal angle Ψ

are selected to produce a maximum Cex chip extraction efficiency.

28. The lamp of claim 15, wherein the at least one optical device comprises a plurality of optical devices configured in an array pattern to cause a determined emission pattern in the array pattern.