Light emitting diode
First Claim
1. A light emitting diode comprising:
- a source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series, wherein the first semiconductor layer comprises a first surface and a second surface opposite to the first surface, and the active layer and the second semiconductor layer are stacked on the second surface in series;
a first electrode covering and contacting the first surface of the first semiconductor layer;
a second electrode electrically connected with the second semiconductor layer, wherein the first electrode and the second electrode are positioned on two opposite sides of the first semiconductor layer;
a lower optical symmetric layer disposed on the second semiconductor layer;
a metallic plasma generating layer disposed on a surface of the lower optical symmetric layer away from the first semiconductor layer;
an upper optical symmetric layer disposed on the metallic plasma generating layer; and
a first optical symmetric layer disposed on a surface of the upper optical symmetric layer away from the first semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
1 Assignment
0 Petitions
Accused Products
Abstract
A light emitting diode includes a source layer, a metallic plasma generating layer, a first optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the first semiconductor layer. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the first semiconductor layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
13 Citations
18 Claims
-
1. A light emitting diode comprising:
-
a source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series, wherein the first semiconductor layer comprises a first surface and a second surface opposite to the first surface, and the active layer and the second semiconductor layer are stacked on the second surface in series; a first electrode covering and contacting the first surface of the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer, wherein the first electrode and the second electrode are positioned on two opposite sides of the first semiconductor layer; a lower optical symmetric layer disposed on the second semiconductor layer; a metallic plasma generating layer disposed on a surface of the lower optical symmetric layer away from the first semiconductor layer; an upper optical symmetric layer disposed on the metallic plasma generating layer; and a first optical symmetric layer disposed on a surface of the upper optical symmetric layer away from the first semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A light emitting diode comprising:
-
a source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series, wherein the first semiconductor layer comprises a first surface and a second surface opposite to the first surface, and the active layer and the second semiconductor layer are stacked on the second surface in series; a first electrode covering and contacting the first surface of the first semiconductor layer, wherein the first semiconductor layer is sandwiched between the first electrode and the active layer; a second electrode electrically connected with the second semiconductor layer; a lower optical symmetric layer disposed on the second semiconductor layer; a metallic plasma generating layer disposed on a surface of the second semiconductor layer lower optical symmetric layer away from the first semiconductor layer; and an upper optical symmetric layer disposed on the metallic plasma generating layer; a first optical symmetric layer disposed on a surface of the upper optical symmetric layer away from the first semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
-
-
16. A light emitting diode comprising:
-
a source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series, wherein the first semiconductor layer comprises a first surface and a second surface opposite to the first surface, and the active layer and the second semiconductor layer are stacked on the second surface in series; a first electrode covering and contacting the first surface of the first semiconductor layer, wherein the first semiconductor layer is located between the first electrode and the active layer; a second electrode electrically connected with the second semiconductor layer; a lower optical symmetric layer disposed on the second semiconductor layer; a metallic plasma generating layer disposed on a surface of the lower optical symmetric layer away from the first semiconductor layer; an upper optical symmetric layer disposed on the metallic plasma generating layer; a plurality of three-dimensional nano-structures disposed on and contacting the active layer; and a first optical symmetric layer disposed on a surface of the upper optical symmetric layer away from the first semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. - View Dependent Claims (17, 18)
-
Specification