Microelectromechanical system (MEMS) resonant switches and applications for power converters and amplifiers

• US 9,077,060 B2
• Filed: 09/09/2010
• Issued: 07/07/2015
• Est. Priority Date: 03/11/2008
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Nguyen, Clark Tu-Cuong, Lin, Yang, Li, Wei-Chang, Kim, Bongsang
• Primary Examiner(s): MUSLEH, MOHAMAD A
• Application Number:
  US12/878,237
• Publication Number:
  US 20110067984A1
• Time in Patent Office: 1,762 Days
• Field of Search: 333/186, 335/78, 200/181
• US Class Current: 1/1
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 50/005 using micromechanics
• CPC Class Codes: H01P 1/127 Strip line switches

Abstract

A modally driven oscillating element periodically contacts one of more electrical contacts, thereby acting as a switch, otherwise known as a resonant switch, or “resoswitch”, with very high Q'"'"'s, typically above 10000 in air, and higher in vacuum. Due to periodic constrained contacting of the contacts, the bandwidth of the switch is greatly improved. One or more oscillating elements may be vibrationally interconnected with conductive or nonconductive coupling elements, whereby increased bandwidths of such an overall switching system may be achieved. Using the resoswitch, power amplifiers and converters more closely approaching ideal may be implemented. Integrated circuit fabrication techniques may construct the resoswitch with other integrated CMOS elements for highly compact switching devices. Through introduction of specific geometries within the oscillating elements, displacement gains may be made where modal deflections are greatly increased, thereby reducing device drive voltages to 2.5 V or lower.

Claims

1. A resonating switch apparatus, comprising:

a) a substrate, and

b) a driven element that resonates in a driven element radial-contour mode;

c) a switch contact proximal to the driven element;

d) a drive electrode that drives a disk resonator that oscillates in a drive resonator radial-contour mode, wherein the driven element is mechanically coupled to the disk resonator through a nonconductive coupling beam;

e) wherein the driven element contacts the switch contact upon a sufficient amplitude oscillation imparted by the disk resonator.

2. The apparatus of claim 1,

wherein the nonconductive coupling beam mechanically couples to the driven element at a notched location in the driven element.

3. A power amplifier comprising at least one of the resonating switch apparatus of claim 1.

4. A power converter comprising at least one of the resonating switch apparatus of claim 1.

5. The apparatus of claim 1, wherein the driven element is polysilicon or a metal.

6. The apparatus of claim 1, wherein the driven element is driven with a voltage amplitude of less than or equal to 3 volts applied to the drive electrode.

7. The apparatus of claim 6, wherein the resonating switch apparatus has a switch closure time of less than 10 ns.

8. The apparatus of claim 6, wherein the resonating switch apparatus has a switch closure time of less than 5 ns.

9. The apparatus of claim 6, wherein the resonating switch apparatus has a switch closure time approximately 4 ns.

10. The apparatus of claim 1, wherein a gap between the disk resonator and the drive electrode is 150 nm or less.

11. The apparatus of claim 1, wherein a gap between the disk resonator and the drive electrode is 100 nm or less.

12. The apparatus of claim 1, wherein a gap between the driven element and the switch contact is 150 nm or less.

13. The apparatus of claim 1, wherein a gap between the driven element and the switch contact is 100 nm or less.

14. The apparatus of claim 1, wherein the driven element has an unconstrained resonant frequency between 61 MHz and 2.0 GHz.

15. The apparatus of claim 1, wherein the resonating switch has a Q of 10000 or greater.

16. The apparatus of claim 1, wherein the resonating switch has a Q of 12500 or greater.

17. The apparatus of claim 16, wherein the resonating switch operates within an ambient gas selected from the group of gasses consisting of:

vacuum, air, nitrogen, argon, SF₆.

18. The apparatus of claim 1, wherein the resonating switch is monolithically fabricated along with one or more CMOS elements.

19. The apparatus of claim 1, wherein the driven element is substantially circular.

20. The apparatus of claim 1,wherein the driven element is substantially flat.

21. The apparatus of claim 1, wherein the driven element comprises one or more displacement gain elements.

22. A cascaded resonator, comprising two or more of the apparatus of claim 21 interconnected with resonant structures, wherein the bandwidth of the cascaded resonator exceeds the bandwidth of each of the individual oscillating switch apparatus of claim 21.

23. A resonating switch, comprising:

a) a substrate;

b) a driven element spaced above and connected to the substrate;

c) a drive electrode proximal to at least one driven element;

d) a switch contact proximal to at least one driven element;

e) wherein the drive electrode oscillates the driven element at resonance in a radial-contour mode;

f) wherein the driven element periodically electrically connects the switch contact;

g) a physical connection between two or more of the driven elements, wherein the oscillation of at least one of the driven elements is transmitted to at least one other driven element; and

h) wherein the physical connection is an insulator.

24. The apparatus of claim 23, wherein the physical connection is disposed above the substrate.

25. The apparatus of claim 23, wherein the physical connection is a beam.

26. A method of signal switching, comprising:

(a) providing a resonant switch apparatus, said resonant switch apparatus comprising;

(i) a substrate, and

(ii) a driven element that oscillates at resonance;

(iii) a switch contact proximal to the driven element; and

(iv) a drive electrode proximal to the driven element;

(v) wherein the driven element periodically contacts the switch contact upon a sufficient amplitude oscillation imparted by the drive electrode; and

(b) driving the driven element, so as to cause vibration of the driven element at resonance in a radial-contour mode.

27. The method of amplifying power of claim 26:

wherein the driven element proximal to the drive electrode is a radial-contour mode input disk resonator biased to a source voltage V_p;

wherein the driven element proximal to the switch contact is a radial-contour mode input disk resonator floating relative to the source voltage V_p; and

providing a non-conductive coupling beam disposed between the biased and unbiased disk resonators.

28. The method of amplifying power of claim 26, further comprising:

using the resonant switch apparatus as a switching element in a Class E amplifier.

29. The method of amplifying power of claim 28, further comprising:

switching a power supply voltage of 10-14volts.