Layer depositing device and method for operating it

• US 9,080,237 B2
• Filed: 09/29/2008
• Issued: 07/14/2015
• Est. Priority Date: 09/28/2007
• Status: Expired due to Fees

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Behres, Alexander
• Primary Examiner(s): Hassanzadeh, Parviz
• Assistant Examiner(s): Ford, Nathan K
• Application Number:
  US12/240,270
• Publication Number:
  US 20090117272A1
• Time in Patent Office: 2,479 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 14/505 for rotation of the substrates
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C23C 16/306 AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

A layer depositing device comprises a chamber (10) having a substrate carrier (12) for receiving at least one substrate (13) to be coated, and a process gas space (11), comprising a partition (23) that separates a first segment (21) of the process gas space (11) from a second segment (22) of the process gas space (11). The layer depositing device has a device (44) for moving the substrate (13) relative to the partition (23).

Claims

1. A layer depositing device comprising:

a chamber having

a substrate carrier for receiving at least one substrate to be coated, the substrate carrier including cutouts on which at least one substrate lies such that the at least one substrate is coatable from below the cutouts, and

a process gas space, comprising six partitions that separate the process gas space into six segments; and

a device for moving the at least one substrate relative to the partitions;

wherein the substrate is arranged to perform a rotational movement;

wherein the at least one substrate is mounted on the topside of the substrate carrier such that the process gas passes through the cutouts formed therein to coat a back side of the at least one substrate;

wherein the process gas space is arranged below the substrate carrier;

wherein the process gas space comprises a first gas feed for conducting in a first process gas G1 into the first segment, a second gas feed for conducting in a second process gas G2 into the second segment, a third gas feed for conducting in a third process gas G3 into the third segment, a fourth gas feed for conducting in a fourth process gas G4 into the fourth segment, a fifth gas feed for conducting in a fifth process gas G5 into the fifth segment, and a sixth gas feed for conducting in a sixth process gas G6 into the sixth segment;

wherein each of the six segments has a different size, so that the at least one substrate has different exposure times in the individual segments;

wherein the device is configured to pass the substrate, in order, through the first segment, the second segment, the third segment, the fourth segment, the fifth segment and the sixth segment;

wherein said first gas feed includes a gas source for said first process gas G1, which is a Group III component of the compound semiconductor and a carrier gas,

wherein said second gas feed includes a gas source for said second process gas G2, which is a Nitrogen carrier gas,

wherein said third gas feed includes a gas source for said third process gas G3, which is a Group V component of the compound semiconductor and a carrier gas,

wherein said fourth gas feed includes a gas source for said fourth process gas G4, which is a Hydrogen carrier gas,

wherein said fifth gas feed includes a gas source for said fifth process gas G5, which is a Group III component of the compound semiconductor and a carrier gas, and

wherein said sixth gas feed includes a gas source for said sixth process gas G6, which is a dopant and a carrier gas.

2. The layer depositing device as claimed in claim 1, wherein the layer depositing device comprises an epitaxial layer depositing device.

3. The layer depositing device as claimed in claim 1, wherein the substrate carrier comprises a circular plate.

4. The layer depositing device as claimed in claim 3, wherein the substrate carrier is arranged such that the substrate carrier is rotatable relative to the process gas space about an axis that is the axis of rotational symmetry of the circular plate.

5. The layer depositing device as claimed in claim 1, wherein the device for moving the at least one substrate relative to the partitions comprises a motor such that the substrate is arranged in the first segment in a first operating state and in the second segment in a second operating state.

6. The layer depositing device as claimed in claim 1, wherein at least one partition is at a distance D1 from the substrate carrier.

7. The layer depositing device as claimed in claim 6, wherein the distance D1 has a value of less than 5 mm.

8. The layer depositing device as claimed in claim 1, wherein at least one of the gas feeds comprises a gas distribution device having a plurality of outlets for distributing a process gas in the corresponding segment.

9. The layer depositing device as claimed in claim 1, further comprising a pre-decomposition stage for decomposing a process gas.

10. The layer depositing device as claimed in claim 9, wherein the pre-decomposition stage comprises a pyrolysis device.

11. The layer depositing device as claimed in claim 9, wherein the pre-decomposition stage comprises a device for generating a plasma.

12. The layer depositing device as claimed in claim 1, wherein the at least one substrate is mounted via the force of gravity.

13. The layer depositing device as claimed in claim 1, wherein the partitions comprise a material which is thermally stable up to a temperature of 2000 degrees Celsius.

14. The layer depositing device as claimed in claim 1, wherein the compound semiconductor is a III-V compound semiconductor.