Electronic device, method for manufacturing the same and touch panel including the same

• US 9,081,460 B2
• Filed: 05/18/2012
• Issued: 07/14/2015
• Est. Priority Date: 05/20/2011
• Status: Active Grant

• Current Assignee: Gwangju Institute of Science and Technology
• Original Assignee: Gwangju Institute of Science and Technology
• Inventors: Jung, Gun-Young, Jeong, Huisu
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US13/475,341
• Publication Number:
  US 20120292162A1
• Time in Patent Office: 1,152 Days
• Field of Search: 216/13, 216/41, 216/83, 977/887, 977/890, 977/952, 977/953, 427/126.3
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 3/045 using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact

Abstract

Provided are an electronic device, a method of manufacturing the same, and a touch panel including the device. The electronic device includes a nanostructure having a plurality of metal oxide nanorods vertically aligned at predetermined intervals in intersection regions between bottom electrodes and top electrodes that perpendicularly cross each other. The nanorods are formed to the same diameter and the same height so that the electronic device can exhibit uniform performance. Also, a method of manufacturing an electronic device includes selectively vertically growing the same number of metal oxide nanostructures with a uniform size only on the bottom electrodes using a nano-template with a plurality of vertical holes. Furthermore, a touch panel includes a nanostructure having a plurality of piezoelectric nanorods disposed in a plurality of touch cells arranged in a matrix.

Claims

1. A method of manufacturing an electronic device, comprising:

forming a plurality of bottom electrodes arranged on a substrate parallel to one another;

forming a metal oxide seed layer on the entire surface of the substrate having the bottom electrodes;

forming a nano-template having a plurality of vertical holes on the metal oxide seed layer;

forming metal oxide nanostructures on the bottom electrodes in a vertical direction with respect to the substrate by growing the metal oxide seed layer exposed through the vertical holes of the nano-template; and

forming top electrodes on the metal oxide nanostructures for perpendicularly intersecting the bottom electrode,

wherein the plurality of vertical holes are placed on the bottom electrodes periodically,

wherein the metal oxide nanostructures are formed in intersection regions between the bottom electrodes and the top electrodes.

2. The method of claim 1, wherein the nano-template contains an insulating polymer.

3. The method of claim 1, wherein the forming of the nano-template comprises:

preparing a nanoimprinting stamp having a plurality of pillars;

coating a light-curable resist on the entire surface of the metal oxide seed layer and applying pressure using the nanoimprinting stamp;

irradiating the light-curable resist with light to cure the light-curable resist and removing the nanoimprinting stamp; and

etching the residual light-curable resist in the imprinted holes until the metal oxide seed layer formed on the bottom electrodes is exposed.

4. The method of claim 1, wherein the metal oxide nanostructures are a plurality of metal oxide nanorods periodically aligned in a vertical direction.

5. The method of claim 1, wherein the forming of the metal oxide nanostructures comprises:

disposing the substrate on which the nano-template having the plurality of vertical holes is formed in a hydrothermal solution; and

growing the metal oxide nanostructures along the holes.